Agere Systems Inc.

Other

Lucent Technologies Inc.

Agere Systems Guartian Corp.

Edward Chan

Jungsang Kim

Bradley Paul Barber

Cristian A Bolle

John Edwin Graebner

Arman Gasparyan

Harold Alexis Huggins

Hyongsok Soh

A micro-electrical-mechanical system (MEMS) device and a method of manufacture therefor. The micro-electrical-mechanical system includes a reflective element and a reflective element actuator located adjacent a perimeter of the reflective element and outside a path of motion of the reflective element.

Micro-electrical-mechanical system (MEMS) device having a plurality of pairs of reflective element actuators located on opposing sides of a reflective element and a method of manufacture therefor

A driver for use with a micro-electromechanical system (MEMS) device, method of operation thereof and a MEMS device employing the driver and method. In one embodiment, the driver includes an actuation subsystem that provides an actuation voltage to alter an angle of an optical element of the MEMS device. The driver also includes a bias subsystem, coupled to the actuation subsystem, that applies a bias voltage between the optical element and the actuation subsystem, thereby reducing the actuation voltage.

Driver and method of operating a micro-electromechanical system device

Improved bandwidths and oscillation uniformity is obtained through a rod type BAW TFR structure formed over a semiconductor support. The resonator includes a first and a second electrode and a plurality of distinct elemental piezoelectric structures between the electrodes. Each of the piezoelectric structures has a length, a width and a height, the height being the distance between the electrodes. The height of the piezoelectric structures is at least equal to or more than one of the length or the width, or both. Such resonator is made by forming on a common bottom a plurality of distinct piezoelectric structures each having a length, a width and a height, wherein the height is formed at least equal to the width or the length of the piezoelectric structure, and forming a common top electrode thereover.

Increased bandwidth thin film resonator having a columnar structure

A new bulk resonator may be fabricated by a process that is readily incorporated in the traditional fabrication techniques used in the fabrication of monolithic integrated circuits on a wafer. The resonator is decoupled from the wafer by a cavity etched under the resonator using selective etching through front openings (vias) in a resonator membrane. In a typical structure the resonator is formed over a silicon wafer by first forming a first electrode, coating a piezoelectric layer over both the electrode and the wafer surface and forming a second electrode opposite the first on the surface of the piezoelectric layer. After this structure is complete, a number of vias are etched in the piezoelectric layer exposing the surface under the piezoelectric layer to a selective etching process that selectively attacks the surface below the piezoelectric layer creating a cavity under the resonator.

Thin film resonators fabricated on membranes created by front side releasing

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New Providence, NJ, United States of America

Edward Chan