General Electric Company

The University of North Carolina at Charlotte

Aquisense Technologies LLC

Other

Gelcore, LLC

Lifeloc Technologies, Inc.

Dot Metrics Technology, Inc.

Dot Metrics Technologies, Inc.

Edward Brittain Stokes

Jennifer Godwin Pagán

Himanshu B Vakil

D Sangeeta

John Yupeng Gui

Howard John Farr

Steven Francis LeBoeuf

Curtis Alan Johnson

Peter Micah Sandvik

Heinz Jaster

Richard Roy Worthing, Jr

Steven Hector Azzaro

Thomas Gary O'Keeffe

Keith Humphries Betscher

Xian-an Cao

Thomas Andrew Schmedake

Alexander S Allen

Thomas J Cartier, Jr

James Wilson Rose

Vinayak Tilak

Vinay Bhaskar Jammu

Thomas Francis McNulty

Stanton Earl Weaver

Elena Babes-Dornea

Jeffrey Bernard Fedison

Daniel Darcy Doxsee

Renyan Qin

Paolo Batoni

Danielle Marie Walker

Alok Mani Srivastava

Anil Raj Duggal

Mark Philip D'Evelyn

Thomas Link Guggenheim

Lionel M Levinson

Gaylord M Kissinger

Leo Spitz MacDonald

John Robert Krause

Gurumurthi Ravishankar

Nikhil Taskar

Abasifreke Udo Ebong

Kelly Silverman

Juan Rodriguez Ordonez

Mohamed-Ali Hasan

James C Blubaugh

John C Crouse

Stanton E Weaver

Darlene Hope Nance

Michael George Walter

Robert F Karlicek, Jr

Fang Christine Chen

Jose M Quintana

Enrique Betancourt

Alfonso M Delgado Cruz

Gregory Dennis Coulter

Marcus Jones

James T Shott, Iii

Kamal Sunderasan

James Marshall Finan

Donald Buckley, Jr

Jennifer Godwin Pagan

In one aspect, light emitting devices are described herein. In some embodiments, a light emitting device described herein comprises an inorganic semiconductor substrate and a layer of quantum dots (QDs) covalently bonded to the inorganic semiconductor substrate. Such a device may further comprise an electrode and an overlayer positioned between the electrode and the layer of QDs. Moreover, the overlayer can be immediately adjacent to and in contact with the layer of QDs. Further, in some cases, the layer of QDs is a close-packed layer of QDs. Additionally, the light emitting device can be a green-emitting light emitting diode (LED) or an amber-emitting LED.

Quantum dot light emitting devices

A system for disinfecting a fluid, including: a flow cell including one or more inlet ports and one or more outlet ports, wherein the flow cell is configured to communicate a fluid containing a biological contaminant from the one or more inlet ports to the one or more outlet portions through an interior portion thereof; and one or more point radiation sources disposed about the flow cell, wherein the one or more point radiation sources are operable for delivering radiation to the biological contaminant; wherein an interior surface of the flow cell is operable for reflecting the radiation delivered to the biological contaminant by the one or more point radiation sources; and wherein the interior surface of the flow cell is operable for reflecting the radiation delivered to the biological contaminant by the one or more point radiation sources such that a radiation intensity is uniform throughout the interior portion of the flow cell. In one exemplary embodiment, the flow cell is an integrating sphere. Optionally, the system also includes a photocatalyzing material disposed on at least a portion of the interior surface of the flow cell.

Systems and methods for performing the bacterial disinfection of a fluid using point radiation sources

The present disclosure relates generally to systems and methods for determining the absorption coefficient and the optical density of a fluid as they relate to the wavelength of incident radiation. Specifically, ultraviolet light-emitting diodes (UV LEDs) or the like that emit ultraviolet (UV) radiation or the like are used as sources for irradiating the interior of an integrating chamber that is designed to increase the path length of the radiation through the fluid, thus enhancing the detection limits of the absorption coefficient and the optical density according to Beer's Law.

Optical density monitor and comparator systems and methods

Systems and methods for performing the bacterial disinfection of a fluid using point radiation source

Implementations disclosed herein provide systems and methods of automatically sterilizing a portable electronic device with ultraviolet (UV) radiation. In one implementation, the method includes distributing UV light substantially uniformly across an intended surface of a device in an enclosure, and sterilizing the intended surface using a calculated dosage of the UV light. In another implementation, an electronic device sterilization system includes an enclosure configured to selectively receive a device for sterilization using a calculated dosage of light, wherein the enclosure includes one or more LEDs, a first reflector configured to receive and reflect the light from the LEDs, and a second reflector configured to receive the light reflected from the first reflector and distribute the light uniformly onto an intended planar surface of the device.

Systems and methods for surface decontamination

Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth (NELOG) in heterostructures having non-lattice matched substrates. The quantum dots in such devices will be electrically pumped and exhibit electroluminescence, as opposed to being optically pumped and exhibiting photoluminescence. There is no inherent 'Stokes loss' in electroluminescence thus the devices of the present invention have potentially higher efficiency than optically pumped quantum dot devices. Devices resulting from the present invention are capable of providing deep green visible light, as well as, any other color in the visible spectrum, including white light by blending different sizes and compositions of the dots and controlling manufacturing processes.

Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture

A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, InN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

Sensor device for detection of dissolved hydrocarbon gases in oil filled high-voltage electrical equipment

A multi-gas sensor device for the detection of dissolved hydrocarbon gases in oil-filled electrical equipment. The device comprising a semiconductor substrate, one or more catalytic metal gate-electrodes deposited on the surface of the semiconductor substrate operable for sensing various gases, and an ohmic contact deposited on the surface of the semiconductor substrate. The semiconductor substrate comprises one of GaN, SiC, AlN, lnN, AlGaN, InGaN and AlInGaN. A method for sensing gas in an oil-filled reservoir of electrical equipment, comprising providing a sensor device, immersing the sensor device in the oil-filled reservoir, allowing the gases emitted from the oil to interact with the one or more catalytic metal gate-electrodes, altering the gas as it contacts the catalytic metal gate-electrodes and altering the sensitivity of the sensor.

A method for increasing carrier concentration in a semiconductor includes providing a group III nitride semiconductor device, determining a wavelength that increases carrier concentration in the semiconductor device, and directing at least one infrared light source, at the determined wavelength, into a semiconductor device excitation band.

Methods and apparatus for a semiconductor device

A flip chip light emitting diode die (&#x2033;) includes a light-transmissive substrate (&#x2033;) and semiconductor layers (&#x2033;) that are selectively patterned to define a device mesa (&#x2033;). A reflective electrode (&#x2033;) is disposed on the device mesa (&#x2033;). The reflective electrode (&#x2033;) includes a light-transmissive insulating grid () disposed over the device mesa (&#x2033;), an ohmic material () disposed at openings of the insulating grid () and making ohmic contact with the device mesa (&#x2033;), and an electrically conductive reflective film (&#x2033;) disposed over the insulating grid () and the ohmic material (). The electrically conductive reflective film (&#x2033;) electrically communicates with the ohmic material ().

Flip-chip light emitting diode

Method for stripping ceramic coatings from the surfaces of articles. The apparatus includes a dedicated pressure vessel, such as an autoclave, which is maintained at an elevated temperature. Caustic solution is preheated to a first elevated temperature before injecting it into the autoclave, and the caustic solution is filtered and cooled after use in the autoclave. The articles are stripped of coating by maintaining the articles at an elevated temperature and pressure for a predetermined time. Various options include the use of analytical equipment to maintain the chemistry of the caustic solution and use of a volatile organic solution to prepressurize the autoclave and shorten cycle time. The articles are transferred to a separate pressure vessel after completion of the stripping operation so that the autoclave used for stripping can be maintained at an elevated temperature, thereby shortening the cycle time for stripping of additional articles.

Method for removing ceramic coatings from component surfaces

Analysis equipment for determining a concentration of an organic component and a caustic component of a reusable organic caustic solution that has been utilized for removing a ceramic coating from a metallic component at elevated temperatures and pressures, such as in an autoclave. Sensors are positioned between a filter for removing particles of the ceramic coating dispersed in the reusable organic caustic solution from the reusable organic caustic solution and a storage tank storing the reusable organic caustic solution after removal from the autoclave. The sensors measure physical properties of the reusable organic caustic solution after removal of the particles from the reusable organic caustic solution, such as electrical conductivity, opacity, refractive index, density, fluidity and the speed of sound in the solution.

Analysis equipment for determining physical properties of an organic solution

A light emitting device comprised of a light emitting diode on a mounting surface, the light emitting diode includes a substrate layer and at least one active region. A resilient substantially transparent and substantially phosphor free polymer layer extends from the mounting surface to above at least one quarter of a height of the substrate layer but below a top surface of the light emitting diode. A second phosphor containing layer extends from the phosphor free polymer layer to above the top surface of the light emitting diode.

Layered phosphor coatings for LED devices

Growing community of inventors

Niskayuna, NY, United States of America

Edward Brittain Stokes