International Business Machines Corporation

Other

Edward August Giess

Eugene John O'Sullivan

Lubomyr Taras Romankiw

William Joseph Gallagher

Emanuel Israel Cooper

Robert L Sandstrom

Robert B Laibowitz

Judith Marie Roldan

George E Keefe

Yeong S Lin

Carl L Eggerding

Robert B Beyers

Aranava Gupta

Byung Tae Ahn

A superconducting multilayer ceramic substrate is disclosed, prepared by firing a laminate of at least two polymer bonded cast sheets of a ceramic dielectric oxide powder, at least one sheet of which has a metallization pattern provided thereon, to thereby form a superconducting oxide reaction layer at the interface between the sintered ceramic material and the embedded metallic conductor lines of the metallization pattern.

Superconducting multilayer ceramic substrate

High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.

High T.sub.c superconductor - gallate crystal structures

A method for forming a substrate for electronic applications having a dielectric constant of less than 6 is disclosed. The method comprises admixing crystalline cordierite particles having a size of 0.1--10 microns with a binder and solvent, casting the same into a sheet, drying the cast sheet into a self-supporting green sheet and then heating the green sheet to burn out the binder and to sinter the particles together. A metallization pattern is deposited on the green sheet after the casting but before the heating, the metallization pattern being molybdenum or tungsten. The cordierite has a defined coefficient of thermal expansion. A dielectric substrate for mounting of integrated circuit devices thereon is also disclosed.

Dielectric substrates comprising cordierite and method of forming the

An improved ion implanted propagation structure for movement of magnetic bubble domains in a storage medium which comprises an additional magnetic layer capable of ion implantation in combination with a bubble domain storage layer in which the bubble domains exist and are moved by the ion implanted layer in response to the reorientation of a magnetic field in the plane of the ion implanted layer. The ion implanted layer (drive layer) can be in intimate contact with the storage layer and exchange coupled thereto, or can be separated from the storage layer by a non-magnetic spacer. The ion implanted layer can comprise different geometry propagation elements and its thickness, 4.pi.M, and other magnetic properties are generally selected to provide flux matching of a charged wall in the ion implanted layer with the flux emanating from the bubble domains to be moved. The charged wall is coupled to the bubble domain by exchange coupling and/or magnetostatic coupling. SU

Ion implanted bubble propagation structure

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Purdys, NY, United States of America

Edward August Giess