Nano-c, Inc.

Other

Merck Patent Gmbh

Irresistible Materials, Ltd

Merk Patent Gmbh

Raynergy Tek Inc.

Edward A Jackson

Henning Richter

John L Roth

Nicolas Blouin

Andreas Frommhold

Thomas A Lada

Dongxu Yang

Stephane Berny

Xiang Xue

Alex Philip Graham Robinson

Alex Phillip Graham Robinson

Alan G Brown

Stéphane Berny

Alex P G Robinson

David P Waller

Li Wen

Taizoon Canteenwala

Alexandra McClelland

Paul Byrne

Tom Lada

Feng He

Patrick Foyle

Greg O'Callahan

Carmen Popescu

Guy Dawson

Fullerene derivative blends are described herein. The blends are useful in electronic applications such as, e.g., organic photovoltaic devices.

Fullerene derivative blends, methods of making and uses thereof

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative substituted with an amine and a crosslinking agent. The formulation is drain compatible with other solvents used in the semiconductor industry.

Hard-mask composition

The present disclosure relates to novel negative-type photoresist composition and methods of their use. The disclosure further relates to multiple trigger photoresist processes which allow for the improvement in contrast, resolution, and/or line edges roughness in some systems without giving up sensitivity. The photoresist compositions and the methods of the current disclosure are ideal for fine patent processing using, for example, ultraviolet radiation, extreme ultraviolet radiation, beyond extreme ultraviolet radiation, X-rays and changed particle. The disclosure further relates to sensitivity enhancing materials useful in the disclosed compositions and methods.

Enhanced EUV photoresist materials, formulations and processes

Disclosed and claimed herein is a composition for forming a spin-on hard-mask, having a fullerene derivative and a crosslinking agent. Further disclosed is a process for forming a hard-mask.

The invention relates to novel fullerene derivatives, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations. 

Fused bis-aryl fullerene derivatives

The invention relates to fullerene derivatives of formula I, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of electronic devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to electronic devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations. 

Fullerene derivatives

The invention relates to improved fullerene derivatives, to methods for their synthesis and any educts or intermediates used in such methods, to compositions and formulations containing fullerene derivatives, to the use of the fullerene derivatives, compositions and formulations in, or for the preparation of, organic electronic (OE) devices like for example organic photovoltaic (OPV) devices or organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, compositions or formulations.

Fullerene derivatives, and related materials, methods and devices

[6,6]-Phenyl Cbutyric acid derivatives (C-PCBR) having a selectivity of greater than 95 wt % of the &#x3b1;-isomer are provided by reacting fullerene Cwith a dialkyl sulfonium tetrafluoroborate having the formula: 

Isomer selective synthesis of methanofullerenes

The invention relates to novel fullerene derivatives, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the fullerene derivatives, mixtures and formulations as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising, or being prepared from, these fullerene derivatives, mixtures or formulations.

Cyclohexadiene fullerene derivatives

Isomer-selective synthesis of methanofullerenes

The present application for patent discloses a composition of matter comprising: comprising a solvent; and an ester having a chemical structure chosen from (I), (II), or (III); wherein X and Y are the same or different, wherein at least one of X and Y comprises an acid labile group, wherein Ris a saturated or unsaturated group having from 1-4 carbon atoms, Ris chosen from hydrogen or a saturated or unsaturated group having from 1-4 carbon atoms, Ris a saturated or unsaturated group having from 1-4 carbon atoms, and Ris a saturated or unsaturated group having from 1-4 carbon atoms and Ais an anion.

Composition of matter and molecular resist made therefrom

Fullerene derivatives and related materials, methods, and devices

Growing community of inventors

Franklin, MA, United States of America

Edward A Jackson