Commissariat a L'energie Atomique Et Aux Energies Alternatives

Edouard Grellier

Maryse Fournier

Daivid Fowler

Lorenzo Iotti

The invention relates to a method for manufacturing a waveguide () including a semiconducting junction (). The method comprises the following steps: providing a support () comprising a semiconducting layer () having a first part () of a first conductivity type ; protecting the first part ; selectively implanting a second conductivity-type dopants in a second part () of the semiconducting layer () adjacent to the first part (). The concentration of second conductivity-type dopants in the second part () is greater than the one of first conductivity-type dopants in the first part (). The method further comprises the steps of: diffusing second conductivity-type dopants in the first part () to form a semiconducting junction () in the first part (), and partially etching the semiconducting layer () to form the waveguide () in the first part (), the protection of the first part () being used so that the semiconducting junction () is included in the waveguide ().

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Grenoble, France

Edouard Grellier