Freescale Semiconductor,inc.

Edouard D De Frèsart

Moaniss Zitouni

Ganming Qin

Pon Sung Ku

Dragan Zupac

A bidirectional trench FET device includes a semiconductor substrate, a trench in the substrate extending vertically from the surface of the substrate, and a body region laterally adjacent the trench. A source region is disposed in the semiconductor substrate between the body region and the surface of the substrate. A dielectric layer is disposed over the surface and a body electrode is disposed over the dielectric layer. A body contact plug extends through the dielectric layer to interconnect the body region with the body electrode, and the body contact plug is electrically isolated from the source region. Two separate metal layers are implemented to make multiple body and source contacts electrically isolated from one another throughout the active area of the device. The low resistive path by the body contact plug and the separate metal layers enables suppression of bipolar snapback without losing bidirectional switching capability.

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Tempe, AZ, United States of America

Edouard D De Frèsart