Hughes Aircraft Company

The United States of America as Represented by the United States

Oregon Graduate Center

Oregon Graduate Institute of Science & Technology

Edmund K Storms

Lynwood W Swanson

Mark W Utlaut

William M Clark, Jr

Anthony E Bell

Robert G Behrens

Eugene G Szklarz

Joseph A Wysocki

William M Clark Jr

Robert P Santandrea

Michael J Bozack

A binary, boron-based alloy as a source for field-emission-type, ion-beam generating devices, wherein boron predominates in the alloy, preferably with a presence of about 60 atomic percent. The other constituent in the alloy is selected from the group of elements consisting of nickel, palladium and platinum. Predominance of boron in these alloys, during operation, promotes combining of boron with trace impurities of carbon in the alloys to form B.sub.4 C and thus to promote wetting of an associated carbon support substrate.

Enhanced-wetting, boron-based liquid-metal ion source and method

A liquid metal ion source and alloy, wherein the species to be emitted from the ion source is contained in a congruently vaporizing alloy. In one embodiment, the liquid metal ion source acts as a source of arsenic, and in a source alloy the arsenic is combined with palladium, preferably in a liquid alloy having a range of compositions from about 24 to about 33 atomic percent arsenic. Such an alloy may be readily prepared by a combustion synthesis technique. Liquid metal ion sources thus prepared produce arsenic ions for implantation, have long lifetimes, and are highly stable in operation.

Liquid metal ion source and alloy

A liquid metal ion source and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source, including an emitter means such as a needle emitter and a source means such as U-shaped heater element, is preferably constructed of rhenium and tungsten, both of which are readily fabricated. The ion sources emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.

Liquid metal ion source and alloy for ion emission of multiple ionic

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Los Alamos, NM, United States of America

Edmund K Storms