Intel Corporation

University of California

Edita Tejnil

Alan R Stivers

Yan A Borodovsky

Giang T Dao

Qi-De Qian

Patrick P Naulleau

Kenneth Alan Goldberg

Ted Liang

Methods for etching devices used for lithography. In one aspect, a method includes etching, in a single etch, a first region and a second region on a substrate. The first region is to attenuate an intensity of the zero diffraction order of a radiation for patterning of a microelectronic device to a first extent. The second region is to attenuate the intensity of the zero diffraction order of the radiation to a second extent. The second extent being sufficiently different from the first extent to improve a quality of the patterned microelectronic device.

Methods for etching devices used in lithography

Systems and techniques for lithography. In one aspect, a method includes producing a microelectronic device by modulating an intensity and a phase of the zero diffraction order of a radiation with a device including subwavelength features having a pitch dimension smaller than one wavelength of the radiation.

Imaging and devices in lithography

A lithography system may utilize a biased sidewall chrome alternating aperture mask (SCAAM). Glass steps in the mask may be positioned at the center of the chrome sidewalls in chrome lines rather than the center of the chrome lines themselves.

Method for correcting focus-dependent line shifts in printing with sidewall chrome alternating aperture masks (SCAAM)

A focus monitor on an alternating phase shift mask may include sub-wavelength features which have a depth corresponding to an etch depth of primary features on the mask (e.g., a 180&#xb0; etch depth), but which produce an effective phase shift of about 60&#xb0; to 120&#xb0;.

Image focus monitor for alternating phase shift masks

An extreme (EUV) lithography system includes optical elements which vary the wavelengths of radiation as a function of the angle of incidence on a mask to maximize the reflected radiation intensity.

Extreme ultraviolet radiation imaging

The present invention claims a binary mask printing a product feature which includes a narrow space; and a phase-shifting mask having an assist feature that fits within the narrow space when both masks are properly aligned in exposing a wafer.

Method of generating optical assist features for two-mask exposure lithography

Inspecting a patterned surface using photoemission of electrons includes selecting materials of the patterned surface, selecting a light source to produce a difference in yield of photoelectrons from the materials, applying the light from the light source to the patterned surface, detecting the emission of photoelectrons from the patterned surface, and inspecting the patterned surface based on the detected photoelectron emissions.

Method to inspect patterns with high resolution photoemission

Optical assist feature for two-mask exposure lithography

A method is described that involves accepting a mask design file input and then simulating the inspection of a mask through an optical channel. The mask design file has patterns. The optical channel corresponds to a mask inspection tool optical channel. The mask is patterned according to the mask design file patterns.

Method and apparatus for physical image based inspection system

A refelective mask having non-reflective and reflective regions. The reflective regions are reflective of light at an inspection wavelength and a semiconductor processing wavelength and the non-reflective regions are substantially non-reflective of light at the inspection wavelength and the semiconductor processing wavelength. The contrast of reflected light off of the non-reflective and reflective regions is greater than 0.210 at either of the two wavelengths.

Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength

A reflective mask is described having non-reflective and reflective regions, where the reflective regions are reflective of a first light that has an inspection wavelength and are reflective of a second light that has a semiconductor processing exposure wavelength. The non-reflective regions are less reflective of the first light and the second light than the reflective regions in order to create: 1) a first image with a contrast greater than 0.210 and that is formed by reflecting the first light off of the reflective mask; and 2) a second image with a contrast greater than 0.750 and that is formed by reflecting the second light off of the reflective mask.

In a phase-shifting point diffraction interferometer, by sending the zeroth-order diffraction to the reference pinhole of the mask and the first-order diffraction to the test beam window of the mask, the test and reference beam intensities can be balanced and the fringe contrast improved. Additionally, using a duty cycle of the diffraction grating other than 50%, the fringe contrast can also be improved.

Growing community of inventors

San Carlos, CA, United States of America

Edita Tejnil