Asml Netherlands B.v.

Eddy Cornelis Antonius Van Der Heijden

Hieronymus Johannus Christiaan Meessen

Sander Frederik Wuister

Jozef Maria Finders

Emiel Peeters

Johannes Anna Quaedackers

Christianus Martinus Van Heesch

Tamara Druzhinina

Henri Marie Joseph Boots

Dorothea Maria Christina Oorschot

Yin Fong Choi

Roelof Koole

Wilhelmus Sebastianus Marcus Maria Ketelaars

Aurelie Marie Andree Brizard

Thanh Trung Nguyen

Jessica Margaretha De Ruiter

A method of designing an epitaxy template to direct self-assembly of a block copolymer on a substrate into an ordered target pattern involves providing a primary epitaxy template design and then varying the design to optimize a pattern fidelity statistic, such as placement error, relative to the target pattern by modelling predicted self-assembled block copolymer patterns and optimizing pattern placement as a function of a varied design parameter. In addition to varying a design parameter to optimize the pattern fidelity statistic, a random error in the template design is included prior to modelling predicted patterns in order to compensate for expected template inaccuracy in practice. The inclusion of a realistic random error in the template design, in addition to systematic variation of a design parameter, may improve the template design optimization to render the result less sensitive to error which may be inevitable in practice.

Methods for providing lithography features on a substrate by self-assembly of block copolymers

A graphoepitaxy template to align a self-assembled block polymer adapted to self-assemble into a 2-D array having parallel rows of discontinuous first domains extending parallel to a first axis, mutually spaced along an orthogonal second axis, and separated by a continuous second domain. The graphoepitaxy template has first and second substantially parallel side walls extending parallel to and defining the first axis and mutually spaced along the second axis to provide a compartment to hold at least one row of discontinuous first domains of the self-assembled block copolymer on the substrate between and parallel to the side walls, and separated therefrom by a continuous second domain. The compartment has a graphoepitaxial nucleation feature arranged to locate at least one of the discontinuous first domains at a specific position within the compartment. Methods for forming the graphoepitaxy template and its use for device lithography are also disclosed.

Method to provide a patterned orientation template for a self-assemblable polymer

A method for providing a pattern on a substrate is disclosed. The method includes providing a first pattern in a first layer of photoresist and a first layer of bottom anti-reflective coating material on the substrate, etching the first pattern into the substrate, providing a second layer of photoresist and a second layer of bottom anti-reflective coating material on the substrate, providing a second pattern in the second layers of photoresist and bottom anti-reflective coating material, and etching the second pattern into the substrate, the first and second patterns on the substrate together defining the pattern.

Lithographic method

A method of measuring overlay between a first structure and a second structure on a substrate is provided. The structures include equidistant elements, such as parallel lines, wherein the equidistant elements of the first and second structure alternate. A design width CDof the elements of the first structure is different from a design width CDof the elements of the second structure. The difference in design width can be used to identify measurement points having incorrectly measured overlay errors.

Overlay measurement on double patterning substrate

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Netersel, Netherlands

Eddy Cornelis Antonius Van Der Heijden