Novellus Systems Incorporated

Lumentum Operations LLC

Lam Research Corporation

Eddie Chiu

John Michael Miller

Yuh-Jia (Jim) Su

Hery Djie

Xiaowei Guo

Qinghong Du

Cindy Wailam Chen

Patrick Lu

Chester Murley

Barbara Haselden

John Lee

Wesley Phillip Graff

Mavis J Chaboya

Chau Arima

A reflective diffraction grating and a fabrication method are provided. The reflective diffraction grating includes a substrate, a UV-absorbing layer, a grating layer having a binary surface-relief pattern formed therein, and a conforming reflective layer. Advantageously, the UV-absorbing layer absorbs light at a UV recording wavelength to minimize reflection thereof by the substrate during holographic patterning at the UV recording wavelength.

Reflective diffraction grating and fabrication method

A method is disclosed for removing a polysilicon layer from a semiconductor wafer, in which a downstream plasma source is used first to planarize the wafer, removing contours in the polysilicon layer caused by deposition over lithographic features, such as via holes. The planarizing process is followed by exposure to a plasma made by a direct, radio frequency plasma source, which may be in combination with the downstream plasma source, to perform the bulk etching of the polysilicon. The invention can produce planar surface topography after the top layer of the film is removed, in which the residual recess height of the polysilicon plug filling a via hole is less than about about 10 nm.

Etch back process approach in dual source plasma reactors

The present invention pertains to methods for cleaning semiconductor wafers, more specifically, for removing polymeric and other residues from a wafer using dry plasmas generated with microwave (MW), electromagnetic field (inductively-coupled plasma (ICP)), and radio frequency (RF) energy. First, a wafer is treated by applying a microwave-generated plasma or an inductively-coupled plasma. Second, a radio frequency generated plasma is applied. Each of the microwave-generated plasma and the inductively-coupled plasma is produced from a gas mixture, which includes an oxygen source gas, a fluorine source gas, and a hydrogen source gas. Using such plasmas provides more controllable etch rates than conventional plasmas via control of fluorine concentration in the plasma. Application of a radio frequency generated (preferably oxygen-based) plasma is used for additional photoresist and polymer removal. The use of this two-step approach provides superior wafer cleaning compared to conventional wet and dry clean methods.

Methods for post polysilicon etch photoresist and polymer removal with minimal gate oxide loss

A method for improving profile control during an etch of a nitride layer disposed above a silicon substrate is disclosed. The nitride layer 106 is disposed below a photoresist mask 108A. The method includes positioning the substrate, including the nitride layer and the photoresist mask, in a plasma processing chamber. There is also included flowing a chlorine-containing etchant source gas into the plasma processing chamber. Further, there is included igniting a plasma out of the chlorine-containing etchant source gas to form a chlorine-based plasma within the plasma processing chamber. Additionally, there is included treating, using a chlorine-based plasma, the photoresist mask in the plasma processing chamber. The treatment of the photoresist is configured to etch at least a portion of the photoresist mask and to deposit passivation polymer on vertical sidewalls of the photoresist mask without etching through the nitride layer.

Techniques for etching with a photoresist mask

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Pleasanton, CA, United States of America

Eddie Chiu