Advanced Micro Devices Corporation

Ecran Adem

Calvin T Gabriel

Suzette Keefe Pangrle

Lynne A Okada

A method of manufacturing a semiconductor device includes forming a first level, forming a first barrier layer over the first level, forming a dielectric layer over the first barrier layer, forming an opening having side surfaces through the dielectric layer, etching the first barrier layer, and filling the opening with metal to form a first metal feature. The process also includes the step of replacing hydroxyl terminated ions on the side surfaces. This step of replacing the hydroxyl terminated ions can occur after the opening is formed or after the first barrier layer is etched. A semiconductor device produced by the method of manufacturing is also disclosed.

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Sunnyvale, CA, United States of America

Ecran Adem