Infineon Technologies Ag

Siemens Aktiengesellschaft

Eckhard Brass

Thoai-Thai Le

Ralf Klein

Joachim Schnabel

Bernd Klehn

Martin Brox

Helmut Schneider

Christian Grewing

George William Alexander

Kazimierz Szczypinski

Thilo Schaffroth

Markus Biebl

J&uuml;rgen Lindolf

Jürgen Oehm

Hermann Fischer

Thomas Schumann

A method for reading data from a dynamic memory circuit is provided, wherein at least one memory cell can be addressed via a word line and a bit line, wherein the memory cell is connected to a first reading amplifier via the bit line, and wherein a switching element, which in the off state isolates the first reading amplifier from the bit line, is provided. The method comprises: a) turning on the switching element to connect the first reading amplifier to the bit line, b) activating the word line to activate the memory cell for reading, c) activating the first reading amplifier to initiate assessment of the information on the bit line, d) turning off the switching element to isolate the first reading amplifier from the bit line, and e) transferring the information which has been read to a data bus.

Method and circuit for reading a dynamic memory circuit

A bandgap reference circuit is provided in which the conventional current loop with a current mirror for feeding a differential amplifier is replaced by a reference current that flows through a resistor connected to the bias input of the differential amplifier. In conjunction with a simpler construction and suitability for lower supply voltages, the circuit exhibits an improved supply voltage rejection PSRR over the prior art.

Bandgap reference circuit

A memory device includes a delay-locked loop circuit having delay elements and a synchronization circuit coupled to the delay-locked loop circuit. The synchronization circuit receives a synchronization enable signal and outputs a plurality of enable signals, including an enable signal coupled to an output circuit. Because the enable signal is synchronized with the read signal, it is possible to provide more time to read data into the buffer. A method of reading data from a memory device couples a synchronization enable signal and an external clock signal to a synchronization circuit. A read signal and an output enable are generated based upon a synchronization enable signal and a delayed clock signal of the external clock signal. Because the output signal is synchronized to the read signal, more time is allowed for the sense function.

Memory device and method of reading data from a memory device

So that semiconductor memory devices can be used optimally with regard to different possible operating frequencies, according to the invention, a register area is formed in which frequency information with regard to a present operating frequency can be stored in coded form and be retrieved for a configuration and adaptation of the semiconductor memory device.

Semiconductor memory device

A circuit configuration for processing data, particularly a semiconductor memory chip, has a control circuit for setting a phase or frequency relationship between two signals. A digital counter detects a phase or frequency difference between the two signals, and the counter reading is used for regulating the phase or frequency relationship. Trials have shown that the counter reading indicates an operating state in the circuit configuration and therefore represents a simple signal for assessing the operating state of the circuit configuration. Preferably, the counter reading is taken as a basis for adjusting the speed or power of time-critical or performance-critical circuit parts in the circuit configuration so that an operating state with an intermediate switching speed is obtained.

Circuit configuration for processing data, and method for identifying an operating state

A circuit configuration for switching over a receiver circuit, in particular in DRAM memories, between a standby mode and an operating mode, includes a differential amplifier functioning as a receiver receiving a control voltage derived from a reference current and generated or fed in for setting a correct operating point of said differential amplifier. A line feeds a current for generating the control voltage. Switching elements are disposed in said line for each receiver. The switching elements are permanently closed in the operating mode by an enable signal present at said switching elements for continuously supplying the current for generating the control voltage. The switching elements are closed at discrete times or periodically in the standby mode by feeding a refresh signal for discontinuously refreshing the control voltage. A DRAM memory having the circuit configuration is also provided.

Circuit configuration for switching over a receiver circuit in particular in DRAM memories and DRAM memory having the circuit configuration

A digital circuit has a signal input terminal and a signal output terminal. The digital circuit additionally has a logic circuit unit, whose input is connected to the signal input terminal and whose output is connected to the signal output terminal via a switching element. Furthermore, it has a filter unit, whose input is connected to the signal input terminal and whose output is connected to a control input of the switching element. The filter unit serves for suppressing glitches on a digital signal present at its input.

Digital circuit having a filter unit for suppressing glitches

A method for testing a multiplicity of word lines of a semiconductor memory configuration in a multiple word line wafer test is described. To prevent a pulling-up of inactive word lines which are at a negative voltage when the active word lines are ramped down, the inactive word lines are decoupled from the negative word line voltage and are connected to a high impedance shortly before the active word lines are ramped down.

Method for testing a multiplicity of word lines of a semiconductor memory configuration

In an integrated semiconductor memory having a memory cell array divided into memory banks, supply potentials with high drive capability are applied to the memory banks only if the respective memory bank is activated for access to a memory cell. For this purpose a supply voltage assigned to the respective memory bank is controlled by the same address signal as the memory bank. The supply voltage sources generate a word line potential, a bit line potential or a substrate potential. As a result, a power loss is reduced.

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Unterhaching, Germany

Eckhard Brass