Infineon Technologies Ag

Qimonda Ag

Eckehard Plaettner

Georg Braun

Christian Weis

Andreas Jakobs

Heiko Fibranz

Jens Christopher Egerer

The invention describes a method for adjusting signal propagation times in a memory system in which a controller is connected to at least one memory chip via a plurality of connecting lines for the purpose of transmitting control and data signals and at least one time reference signal. In line with the invention, the propagation time differences between connecting lines are ascertained from the result of echo measurements. To this end a respective transmitted pulse is applied to one end, selected as the transmission end, of the connecting lines in question, while the other end of the connecting lines in question is respectively terminated with a reflective termination. At the transmission end, the echo time which elapses between one edge of the transmitted pulse and the appearance of this edge's echo reflected from the other end is measured. On the basis of the ascertained propagation time differences, regulatable delay devices are set in order to compensate for these propagation time differences. The subject matter of the invention is also circuit arrangements for performing this method.

Method and circuit arrangements for adjusting signal propagation times in a memory system

Methods and apparatus for setting various terminations of a memory chip. The memory chip includes a terminal, a termination circuit that can be connected to the terminal in order to terminate the terminal with a settable resistance value, a control command port for receiving a control command signal, and a control circuit that is connected to the termination circuit in order to set a resistance value as a function of a received control command signal.

Memory chip with settable termination resistance circuit

A method is provided for adapting the phase relationship between a clock signal and a strobe signal for accepting write data to be transmitted into a memory circuit, a write command signal being transmitted to the memory circuit in a manner synchronized with the clock signal, a write data signal being transmitted synchronously with the strobe signal, a phase offset between the transmitted clock signal and the transmitted strobe signal being set such that the write data are reliably accepted in the memory circuit. The method comprises the following acts performed in the memory circuit: generating a write acceptance signal depending on the clock signal and the write command signal with a specific pulse duration; determining the number of edges of the strobe signal with a defined edge direction during the pulse duration; comparing the number determined with a predetermined desired number of corresponding edges of the strobe signal; and providing an item of error information indicating whether the number determined matches the desired number.

Semiconductor memory and method for adapting the phase relationship between a clock signal and strobe signal during the acceptance of write data to be transmitted

An integrated circuit has a synchronous circuit and an asynchronous circuit. A clock-controlled input register circuit and an output register circuit for storing data are each connected to the synchronous circuit and the asynchronous circuit. Data are transferred from the synchronous circuit into the input register circuit, from where they are transferred into the asynchronous circuit and processed in the asynchronous circuit. Processed data are transferred into the output register circuit. A sequence controller generates a respective control clock signal for the register circuits in a manner dependent on the data processing duration of the asynchronous circuit. This enables a high data throughput between the synchronous circuit and the asynchronous circuit independently of a clock frequency of the synchronous circuit.

Integrated circuit having a synchronous and an asynchronous circuit and method for operating such an integrated circuit

An electronic circuit for generating an output voltage has a defined temperature dependence, a bandgap circuit for generating a defined temperature-constant voltage and a temperature-dependent current with a defined temperature dependence, and a conversion circuit for generating the output voltage from the temperature-dependent current and the temperature-constant voltage. The conversion circuit has a first resistor at whose first terminal the temperature-constant voltage is applied, and whose second terminal is connected to a first terminal of a second resistor. The second terminal of the second resistor is connected to a supply voltage potential, and a first terminal of a third resistor is connected to the second terminal of the first resistor. The temperature-dependent current is supplied to a second terminal of the third resistor, and it being possible to tap the output voltage at the second terminal of the third resistor.

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Oberhaching, Germany

Eckehard Plaettner