Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Ce Cell Engineering Gmbh

Eckehard Hofmüller

Hongming Zhao

Christian Hagendorf

Eve Krassowski

Stephan Grosser

Stefan Stöckel

Marko Turek

The invention relates to a method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell, in which, in a treatment step, a treatment current flow having a current density of 200 A/cmto 20,000 A/cmin relation to the treatment section is induced while biasing and illuminating the silicon solar cell. The object of the invention is to improve the method for improving the ohmic-contact behaviour between a contact grid and an emitter layer of a silicon solar cell. In particular, it should be possible to quantify the improvement achieved by the method while implementing the method. Furthermore, any damage resulting from the application of unfavourable process parameters should be detected while the method is being implemented. This object is achieved in that a measurement step is carried out before and/or after the treatment step, and, in said measurement step, a measurement current flow having a current density of 1 mA/cmto 500 mA/cmis induced by illuminating the sun-facing side of the silicon solar cells and biasing, and a current strength of said measurement current flow is sensed using an ammeter and stored assigned to the respective measurement section.

Method for improving the ohmic contact behavior between a contact grid and an emitter layer of a silicon solar cell

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Munich, Georgia

Eckehard Hofmüller