Nanyang Technological University

Agency for Science, Technology and Research

Ebinazar Benjamin Namdas

Pooi See Lee

Yeng Ming Lam

Lixin Song

G Subodh Mhaisalkar

Zhikuan Chen

Wei Lin Leong

Tommy Cahyadi

An organic memory device is disclosed that has an active layer, at least one charge storage layer of a film of an organic dielectric material, and nanostractures and/or nano-particles of a charge-storing material on or in the film of dielectric material. Each of the nanostructures and/or nano-particles is separated from the others of the nanostractures and/or nano-particles by the organic dielectric material of the organic dielectric film. A method of manufacturing the organic memory device is also disclosed.

Organic memory device with a charge storage layer and method of manufacture

A method for fabricating a sol-gel film composition for use in a thin film transistor is disclosed. The method includes fabricating the sol-gel dielectric composition by solution processing at a temperature in the range 60&#xb0; C. to 225&#xb0; C. The sol-gel film made by the method, and an organic thin-film transistor incorporating the sol-gel film are also disclosed.

Solution-processed inorganic films for organic thin film transistors

Growing community of inventors

Singapore, Singapore

Ebinazar Benjamin Namdas