Freiberger Compound Materials Gmbh

Schering Aktiengesellschaft

Hoechst Schering Agrevo Gmbh

Forschungsverbund Berlin E.v.

Eberhard Richter

Markus Weyers

Frank Habel

Marit Gründer

Frank Brunner

Richard Rees

Jurgen Bohner

Reinhold Puttner

Dieter Hubl

Günther Tränkle

Ernst-Albrecht Pieroh

Christian Hennig

Guenther Traenkle

The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation &#x3b5;in the range of &#x3c;0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation &#x3b5;in the range of &#x3c;0.

Processes for producing III-N single crystals, and III-N single crystal

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

Method for producing III-N single crystals, and III-N single crystal

The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.

Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy

Synergistic herbicidal mixtures

There are described new 2-imino-1,3-dithietanes of general formula I ##STR1## in which R is the group ##STR2## in which A is CFHal, C(CH.sub.3)C.sub.1-4 -alkyl, C(CH.sub.3)CHal.sub.3, C(CH.sub.3)CF.sub.2 Cl, C(CH.sub.3)CFCl.sub.2, C.sub.2 H.sub.4, C.sub.2 H.sub.3 Hal, C.sub.2 H.sub.2 Hal.sub.2, C.sub.2 HHal.sub.3, C.sub.2 F.sub.2 Cl.sub.2, C.sub.2 F.sub.4 or C.sub.2 F.sub.3 Cl, in which Hal is F or Cl, Y is nitrogen or CH, R.sup.1 is fluoro-C.sub.1-12 -alkyl, fluoro-C.sub.2-12 -alkenyl, fluoro-C.sub.2-12 -alkynyl, fluorocyclopropyl or fluorocyclopropylmethyl; X is oxygen or sulphur, 2 is defined in the specification and n is 0, 1 or 2, as well as their acid addition salts, a process for their preparation and their use as pesticides. The new compounds are especially useful as nematicides.

2-imino-1,3-dithietanes, their use as pesticides

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Berlin, Germany

Eberhard Richter