International Business Machines Corporation

Uniphase Laser Enterprise Ag

Eberhard Latta

Peter Roentgen

Christoph S Harder

Marcel Gasser

Abram Jakubowicz

Wilhelm Heuberger

Albertus Oosenbrug

William Patrick

Erica Williams

Urs Deutsch

Andreas Daetwyler

As will be described in more detail hereinafter, there is disclosed herein a titanium nitride diffusion barrier layer and associated method for use in non-silicon semiconductor technologies. In one aspect of the invention, a semiconductor device includes a non-silicon active surface. The improvement comprises an ohmic contact serving to form an external electrical connection to the non-silicon active surface in which the ohmic contact includes at least one layer consisting essentially of titanium nitride. In another aspect of the invention, a semiconductor ridge waveguide laser is disclosed which includes a semiconductor substrate and an active layer disposed on the substrate. A cladding layer is supported partially on the substrate and partially on the active layer. The cladding layer includes a ridge portion disposed in a confronting relationship with the active region. A metallization structure substantially covers the ridge portion and includes at least one layer consisting essentially of titanium nitride.

Titanium nitride diffusion barrier for use in non-silicon technologies and method

A process for reducing the particle current in the sub-gap range of all-Nb Josephson junctions. The process results in junctions having substantially increased values of V.sub.m. In order to reduce the single particle current, the reaction between the barrier layer oxide and the counter electrode is prevented by additional process steps. After forming the tunnel barrier (4) and before depositing the counter electrode (9), the tunnel barrier surface is covered with a thin, non-continuous layer (5) of a material such as gold which is not reacting with oxygen at process conditions. Subsequently, the non-covered barrier layer surface regions (7) are strongly oxidized thereby forming an oxide layer (8) of sufficient thickness to prevent electron tunneling in these regions.

Process for producing niobium Josephson junctions

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Adliswil, Switzerland

Eberhard Latta