Novellus Systems Incorporated

Lam Research Corporation

Easwar Srinivasan

Karl Frederick Leeser

Paul Konkola

David Mordo

Dennis Michael Hausmann

Jon Henri

Ramesh Chandrasekharan

Seon-Mee Cho

Henner Meinhold

Dan M Doble

Vince Wilson

Bart Jan Van Schravendijk

Haiying Fu

Stephen Lau

Ananda K Bandyopadhyay

Ming Chu Li

Shankar Swaminathan

Mandyam Sriram

Hu Kang

Thomas W Mountsier

Keith Fox

Qingguo Wu

Antonio Xavier

Thomas G Jewell

Tom Dorsh

Bryan Schlief

Adrien Lavoie

Adrien LaVoie

Curtis Warren Bailey

Brian Lu

Nick Ray Linebarger, Jr

Stephen Yu-Hong Lau

Bart K Van Schravendijk

Andrew Borth

Dan Vitkavage

Aleksey V Altecor

Devon Pelkey

Erica Sakura Strandberg Pohl

Carole Mars

Willis Kirkpatrick

The present disclosure relates, in part, to an apparatus for controlling the concentration of a component within a gas mixture. In particular embodiments, the component is a vaporized liquid component, such as a vaporized stabilizer or a vaporized precursor. Also described are systems thereof and methods for such control.

Concentration control using a bubbler

A heater control system for a gas delivery system of a substrate processing system includes an oven, N resistive uninsulated heaters arranged inside of the oven, where N is an integer greater than one, and a controller. The oven encloses one or more components of the substrate processing system and to maintain a predetermined temperature in the oven. Each of the N resistive heaters selectively heats at least a portion of one of the components in the oven. The controller is configured to maintain the predetermined temperature in localized regions in the oven by determining a resistance in each of the N resistive heaters and adjusting power to each of the N resistive heaters based on N-1 resistance ratios of N-1 of the N resistive heaters relative to one of the N resistive heaters.

Progressive heating of components of substrate processing systems using TCR element-based heaters

An assembly used in a process chamber for depositing a film on a wafer. A pedestal assembly includes a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal assembly. A raising mechanism separates the lift pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, and a lever rotatably attached to the lift pad bracket. The lever rests on the roller when not engaged with the upper hard stop. When the pedestal assembly moves upwards, the lever rotates about a pin when engaging the upper hard stop and roller, and separates the lift pad from the pedestal by a process rotation displacement.

Pad raising mechanism in wafer positioning pedestal for semiconductor processing

A heater control system for heating components of a substrate processing system includes N heater zones, where N is an integer greater than zero. Each of the N heater zones heats a component of the substrate processing system and includes a resistive heater and a temperature sensor to sense a local temperature in a corresponding one of the N heater zones. A controller is configured to determine an average temperature of each of the N heater zones based on a resistance of the resistive heater in each of the N heater zones. The controller controls the resistive heater based on the average temperature and the local temperature in each of the N heater zones.

An assembly used in a process chamber for depositing a film on a wafer and including a pedestal extending from a central axis. An actuator is configured for controlling movement of the pedestal. A central shaft extends between the actuator and pedestal, the central shaft configured to move the pedestal along the central axis. A lift pad is configured to rest upon the pedestal and having a pad top surface configured to support a wafer placed thereon. A pad shaft extends between the actuator and the lift pad and controls movement of the lift pad. The pad shaft is positioned within the central shaft and is configured to separate the lift pad from the pedestal top surface by a process rotation displacement when the pedestal is in an upwards position. The pad shaft is configured to rotate relative to the pedestal top surface between first and second angular orientations.

Wafer positioning pedestal for semiconductor processing

A showerhead for a plasma chamber comprises a resistive heater configured to receive power to heat the showerhead of the plasma chamber, and a resistive element thermally bonded to the showerhead of the plasma chamber. The resistive element changes resistance in response to a change in temperature of the showerhead. The resistive element is encapsulated in an insulating material to electrically insulate the resistive element from the showerhead. The insulating material is a good conductor of heat. The power to the resistive heater is received based on the resistance of the resistive element.

Controlling showerhead heating via resistive thermal measurements

An assembly used in a process chamber for depositing a film on a wafer including a pedestal assembly having a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal. A raising mechanism separates the pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, a lever rotatably attached to lift pad bracket, a ferroseal assembly surrounding the pad shaft, and a yoke assembly offsetting a moment to the ferroseal assembly when the lever rotates. When the pedestal assembly moves upwards, the lever rotates when engaging with the upper hard stop and roller, and separates the pad from the pedestal by a process rotation displacement.

Moment cancelling pad raising mechanism in wafer positioning pedestal for semiconductor processing

A temperature controlled showerhead for chemical vapor deposition (CVD) chambers enhances heat dissipation to enable accurate temperature control with an electric heater. Heat dissipates by conduction through a showerhead stem and fluid passageway and radiation from a back plate. A temperature control system includes one or more temperature controlled showerheads in a CVD chamber with fluid passageways serially connected to a heat exchanger.

Temperature controlled showerhead

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Beaverton, OR, United States of America

Easwar Srinivasan