Texas Instruments Corporation

Earl Vedere Atnip

Kelly Jay Taylor

Raul Enrique Barreto

Simon Joshua Jacobs

William Robert Morrison

John Wesley Hamlin

Win Jae Jessie Yuan

Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.

MEMS via with enhanced electrical and mechanical integrity

In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Use of metal native oxide to control stress gradient and bending moment of a released MEMS structure

A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

A microelectromechanical (MEMS) device has a movable member supported in elevated position spaced by a sloped support structure above a substrate. The movable member may be a polished metallic plate such as a mirror of a digital micromirror device (DMD) supported by a flexible hinge above an integrated circuit wafer die region. The plate may supported centrally at a raised juncture of two upwardly oppositely directed and symmetrically converging hinge legs for pivoting about a parallel axis. The plate may also be supported at a top end of a hinge leg in cantilever fashion, for pivoting about a perpendicular axis. Optional spring tips are provided for limiting movement and recovering energy. In a described fabrication method, hinge material is deposited over a sacrificial layer that has been directly or indirectly patterned using a grayscale photoresist exposure to define sloped surfaces which provide a template for configuring the hinge and optional other components.

MEMS device with sloped support

In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.

Manufacturing optical MEMS with thin-film anti-reflective layers

A MEMS device is packaged in a process which hydrogen (H) deuterium (D) for reduced stiction. H is exchanged with D by exposing the MEMS device with a deuterium source, such as deuterium gas or heavy water vapor, optionally with the assistance of a direct or downstream plasma.

Reduced stiction and mechanical memory in MEMS devices

A method of removing photoresist material from a semiconductor wafer is disclosed. The method includes rinsing the semiconductor wafer in an organic solvent selected to dissolve the photoresist material. The method next rinses the semiconductor wafer in a light alcohol such as isopropyl alcohol. The method next subjects the semiconductor wafer to an alcohol vapor dry operation. An oxygen plasma ashing operation is then used to oxidize organic material on the semiconductor wafer. This is followed by another rinse. This post ash rinse includes only the light alcohol without the organic solvent. The post ash rinse may include dipping the semiconductor wafers into one or two isopropyl alcohol tanks. Finally is another alcohol vapor dry operation. The elimination of organic solvent use during the post ash rinse operation following the oxygen plasma ashing: reduces the organic solvent costs of acquisition, handling and disposal; reduces the length of time needed for the post ash rinse; reduces the capital equipment costs for the post ash rinse; and it is believed eliminates yield loss due to contaminants in the organic solvent.

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Plano, TX, United States of America

Earl Vedere Atnip