Veeco Instruments Inc.

Earl Marcelo

Alexander I Gurary

Sandeep Krishnan

Chenghung Paul Chang

William E Quinn

Matthew King

Vadim Boguslavskiy

Eric Armour

Guray Tas

Joshua Mangum

A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

Self-centering wafer carrier system for chemical vapor deposition

Self-centering wafer carrier for chemical vapor deposition

An apparatus includes a carrier rotatable about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer and a surface characterization tool which is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation. The surface characterization tool is operative to move over a plurality of positions relative to the top surface of the carrier and/or the wafer transverse to the axis of rotation and is further adapted to produce characterization signals over the plurality of positions on at least a portion of the carrier and/or on at least a portion of said major surface of the wafer as the carrier rotates.

Heated wafer carrier profiling

A method for characterizing a surface comprises rotating a carrier about an axis of rotation where the carrier has a top surface adapted to hold at least one semiconductor wafer with a major surface of the wafer extending generally transverse to the axis of rotation. A surface characterization tool is moved over a plurality of positions relative to the top surface of the carrier, where a measurement location over the top surface of the carrier is changed while said top surface of the carrier is heated to a predetermined temperature. Characterization signals over the plurality of positions with the surface characterization tool are produced and contain information about the heated top surface of the carrier, or when semiconductor wafers are held on the carrier, information about the semiconductor wafer can also be obtained.

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Southfield, NJ, United States of America

Earl Marcelo