Kla Tencor Corporation

Kla Corporation

Sensarray Corporation

Other

Nanometrics Inc.

Earl M Jensen

Mei H Sun

Kevin O'Brien

Wayne Glenn Renken

Farhat A Quli

Roy Gordon

Lynn Karl Wiese

Ran Liu

Brian Paquette

Stephen Sharratt

Robert D Tas

Jing Zhou

Paul Arleo

Vaibhaw Vishal

Christopher Kirk

Jing G Zhou

Guillermo L Toro Lira

An apparatus includes an instrumented substrate apparatus, a substrate assembly including a bottom and top substrate mechanically coupled, an electronic assembly, a nested enclosure assembly including an outer and inner enclosure wherein the outer enclosure encloses the inner enclosure and the inner enclosure encloses the electronic assembly. An insulating medium between the inner and outer enclosure and a sensor assembly communicatively coupled to the electronic assembly including one or more sensors disposed at one or more locations within the substrate assembly wherein the electronic assembly is configured to receive one or more measurement parameters from the one or more sensors.

Encapsulated instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications

An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.

Instrumented substrate apparatus

A sensor for detecting a temperature distribution imparted on a substrate in an environment is disclosed. The sensor includes a sensor substrate with one or more temperature sensing elements formed on the sensor substrate. In embodiments, a temperature sensing element includes at least one cavity with a thermally expandable material disposed within the cavity and a channel extending from the cavity with a slug disposed within the channel. In embodiments, the cavity has a fixed volume and is enclosed by a cover layer disposed or formed over the cavity. The thermally expandable material is configured to extend from the cavity into the channel to actuate the slug from a first position within the channel to at least a second position within the channel, where the position of the slug is indicative of a temperature of a respective portion of the sensor substrate.

In-situ temperature sensing substrate, system, and method

A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

Process condition sensing device and method for plasma chamber

A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly.

Method and system for measuring radiation and temperature exposure of wafers along a fabrication process line

A sensor apparatus has a substrate and a spectrally selective detection system, and a cover. The spectrally sensitive detection system is sandwiched between the substrate and the cover. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors located within the substrate. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Wafer level spectrometer

A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

Method and system for measuring heat flux

Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the substrate device on the substrate support surface. The substrate device and the substrate support surface may have counterpart coarse position units and fine position units. The system may measure coarse positional offsets between the first and second coarse position units, re-position the substrate device on the substrate support surface based on the coarse positional offsets, and subsequently measure fine positional offsets between the first and second fine position units. In some implementations, the substrate device is integrally coupled to the substrate handler via a wireless communication link in order to communicate position information as feedback for further placement.

Position sensitive substrate device

A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Film thickness monitor

Aspects of the present disclosure describe a smart docking station. The smart docking station may contain a data transfer and an electrical connection which allow a sensor wafer to be charged and to upload and download data. The smart docking station may be located at an off-track storage position above a tool. This location enables an automated materials handling system (AMHS) to retrieve the sensor wafer and deliver it to a tool requiring analysis. The sensor wafer may be stored in a smart front opening unified pod (FOUP). It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Automated interface apparatus and method for use in semiconductor wafer handling systems

Aspects of the present disclosure describe an inspection apparatus which performs inspection on a smaller field of a wafer with structures for current collection. The defective via holes may be located based on the collected current. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Defect inspection apparatus, system, and method

An etch rate monitor apparatus has a substrate, an optical element and one or more optical detectors mounted to a common substrate with the one or more detectors sandwiched between the substrate and optical element to detect changes in optical interference signal resulting from changes in optical thickness of the optical element. The optical element is made of a material that allows transmission of light of a wavelength of interest. A reference waveform and data waveform can be collected with the apparatus and cross-correlated to determine a thickness change. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Thickness change monitor wafer for in situ film thickness monitoring

Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Growing community of inventors

San Jose, CA, United States of America

Earl M Jensen