Rensselaer Polytechnic Institute

Samsung Electro-mechanics Co., Ltd.

Boston University

Samsung Led Co., Ltd.

Samsung Electronics Co., Ltd.

Sandia Corporation

E Fred Schubert

Martin F Schubert

Cheol-soo Sone

Jae-hee Cho

Jong Kyu Kim

Jong-kyu Kim

Frank Wilhelm Mont

Sameer Chhajed

Jaehee Cho

Cheolsoo Sone

Ahmed Noemaun

David J Poxson

Min-Ho Kim

June-o Song

Richard W Siegel

Mary H Crawford

Yongjo Park

Daniel D Koleske

Yong-jo Park

Shawn-Yu Lin

Mei-Ling Kuo

Sukho Yoon

Xing Yan

Luo Hong

Dean A Stocker

Di Zhu

An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.

Ultra-low reflectance broadband omni-directional anti-reflection coating

The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiOcoatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.

Tunable nanoporous films on polymer substrates, and method for their manufacture

A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.

Nitride semiconductor light emitting device

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

High efficiency III-nitride light-emitting diodes

Image display structures and methods of forming image display structures are provided. The image display structure includes a liquid crystal layer disposed between opposing substrates and first and second transparent electrodes disposed between the liquid crystal layer and the respective opposing substrates. At least one of the first and second transparent electrodes includes a porosity such that a refractive index of the respective transparent electrode is reduced.

Liquid crystal display with refractive index matched electrodes

The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction.

Encapsulant shapes for light emitting devices lacking rotational symmetry designed to enhance extraction of light with a particular linear polarization

A LED device is provided having a diffuse reflective surface which includes an LED chip emitting light, a reflector cup having the LED chip arranged at a bottom surface thereof and having an angled surface which diffusely reflects the light emitted by the LED chip, and a light conversion material provided in the reflector cup for converting the light emitted by the LED chip into visible light rays. The light-conversion material is spatially separated from the LED chip by a length equal or greater than the maximum length of the LED chip.

LED device having diffuse reflective surface

A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources.

Reflector shapes for light emitting diode-polarized light sources

In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

Light emitting diodes and display apparatuses using the same

Provided are a highly transmissive optical thin film having an improved structure, in which, optical reflection (due to a difference in the refractive index between a semiconductor material and the air, when light is extracted from a semiconductor light emitting device into the air) may be suppressed, an optical output loss may be reduced and light transmittance efficiency may be maximized or increased, a semiconductor light emitting device having the same, and methods of fabricating the same. The optical thin film may include a first material layer having a first refractive index, a second material layer formed on the first material layer and having a second refractive index that is smaller than the first refractive index, and a graded-refractive index layer interposed or inserted between the first material layer and the second material layer and having a multi-layer structure in which refractive index distribution gradually decreases in the range between the first refractive index and the second refractive index as the refractive index distribution progresses from the first material layer toward the second material layer.

Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same

A light emitting device having a monolithic protection element and a method of fabricating the light emitting device are provided. The light emitting device includes: a light emitter having a cathode and an anode; and the resistive protection element connected to the light emitter in parallel through the cathode and the anode. Here, a resistance Rs of the resistive protection element has a value between a forward resistance Rf and a reverse resistance Rr of a current of the light emitter.

Light emitting device having protection element and method of manufacturing the light emitting device

A high extraction efficiency, light-emitting diode having a reflective submount and methods for forming the LED. A light-emitting region is disposed between a top contact and a conductive holder. The region extends beyond an area underlying the top contact. An omni-directional reflector is disposed between the light-emitting region and the conductive holder. According to one embodiment, the reflector comprises one or more electrically conductive contacts configured to correspond to an area beyond the area underlying the top contact. According to one embodiment, the reflector comprises a dielectric layer having a refractive index of between about 1.10 and 2.25, contacts extending through the reflector, and a reflective conductive film.

Light-emitting diode with planar omni-directional reflector

A method of processing III-Nitride epitaxial layer system on a substrate. The process includes exposing non-c-plane surfaces of the III-nitride epitaxial layer system, for example by etching to a selected depth or cleaving, and crystallographical etching the epitaxial layer system in order to obtain crystallographic plane surfaces. In an exemplary embodiment, the III-Nitride epitaxial layer system includes GaN. In accordance with one aspect of the exemplary embodiment, the etching step includes reactive ion etching in a chlorine-based plasma, PEC etching in a KOH solution or cleaving, and the crystallographical etching step includes immersing the epitaxial layer system in a crystallographic etching chemical, such as phosphoric acid, molten KOH, KOH dissolved in ethylene glycol, sodium hydroxide dissolved in ethylene glycol, tetraethyl ammonium hydroxide, or tetramethyl ammonium hydroxide. Speaific etching planes are chosen in accordance with varying the orientation of the exposing step, the etching chemical, and the temperature at which the epitaxial layer system is etched.

Crystallographic wet chemical etching of III-nitride material

A semiconductor having enhanced acceptor activation is disclosed. The semiconductor comprises a ternary compound having a non-abruptly varying composition that is uniformly doped. The modulation of the chemical composition leads to a variation of the valence band energy. The modulation of the valence band results in a strong enhancement of the acceptor activation. A method for making a semiconductor having enhanced acceptor activation comprises two steps. They are (1) forming a ternary compound semiconductor having a non-abruptly varying composition, and (2) uniformly doping said semiconductor with a dopant. These two steps may be conducted simultaneously.

Growing community of inventors

Troy, NY, United States of America

E Fred Schubert