Fairchild Semiconductor Corporation

Dwayne S Reichl

Hamza Yilmaz

Joseph Andrew Yedinak

Douglas Joseph Lange

Praveen Muraleedharan Shenoy

Jaegil Lee

Bernard J Czeck

Christopher Lawrence Rexer

Mark L Rinehimer

Chongman Yun

Jack Edward Wojslawowicz

Robert Baran

Hocheol Jang

Harold Heidenreich

Josph A Yedinak

In one general aspect, a power device includes an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width. The power device includes a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type where the plurality of pillars of the second conductivity type in the active region each have substantially the same width and are smaller than each width of the pillars of the second conductivity type in the termination region. The power device includes a transition region disposed between the active region and the termination region.

Superjunction structures for power devices

In a general aspect, a power device can include at least one N-type epitaxial layer disposed on a substrate and a plurality of N-pillars and P-pillars that define alternating P-N-pillars in the at least one N-type epitaxial layer. The power device can also include an active region and a termination region, where the termination region surrounds the active region. The alternating P-N-pillars can be disposed in both the active region and the termination region, where the termination region can include a predetermined number of floating P-pillars.

Superjunction structures for power devices and methods of manufacture

An integrated circuit includes a die having a device layer. An insulating layer is disposed over the device layer. A die street defines the outermost bounds of the die. A voltage divider network including a plurality of resistive elements derives a plurality of predetermined bias voltages. A field plate termination includes a plurality of field plates disposed on the oxide layer and are laterally spaced apart relative to each other and relative to the die street. Each of the plurality of field plates is electrically connected to a corresponding bias voltage. The bias voltage applied to a given field plate is determined by and increases with the proximity of that field plate relative to the die street.

Voltage divider field plate termination with unequal fixed biasing

An integrated circuit die includes an active area having source dopants and contacts. An active area metal layer overlies the active area. A sense area is disposed on the die. A sense area metal layer overlies the sense area. A plurality of polysilicon gate stripes, polysilicon openings, and body stripes are disposed on the die, and extend in a continuous and uninterrupted manner from the active area into the sense area. A first region from which source dopants and contacts have been excluded surrounds a periphery of the sense area. An etched region is disposed over the first region, thereby separating and electrically isolating the sense area metal layer from the active area metal layer.

Method of isolating the current sense on power devices while maintaining a continuous stripe cell

An IGBT has striped cell with source stripes continuous or segmented along the length of the base stripe The opposite stripes are periodically connected together by the N&plus; contact regions to provide channel resistance along the width of the source stripes . For continuous stripes the resistance between two sequential contact areas is greatest in the middle and current concentrates near the source contact regions The wider the spacing between the contacts the larger the resistive drop to the midpoint between two N&plus; contacts

IGBT with channel resistors

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Pocono Lake, PA, United States of America

Dwayne S Reichl