Evonik Degussa Gmbh

Evonik Operations Gmbh

Duy Vu Pham

Alexey Merkulov

Juergen Steiger

Arne Hoppe

Heiko Thiem

Dennis Weber

Anita Neumann

Yvonne Damaschek

Matthias Driess

Jürgen Steiger

Stefan Schutte

Yilmaz Aksu

Dennis Fruehling

Mario Resing

Kuo Hui Su

Jürgen Franosch

Andreas Szentivanyi

Felix Jaehnike

Jurgen Steiger

Silviu Botnaras

Eckart Ruban

Dennis FRÜHLING

The present invention relates to a coating composition producible from at least one yttrium-containing precursor, a solvent A, and a solvent B, which is different from the solvent A, the ratio of the vapor pressure of the solvent A at 20&#xb0; C. to the vapor pressure of solvent B at 20&#xb0; C. being to methods for producing it, and to its use.

Coating composition, method for producing same and use thereof

The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

Formulations comprising ammoniacal hydroxozinc compounds

The present invention relates to metal oxide precursors comprising i) at least one metal atom selected from the group consisting of In, Ga, Zn and Sn, ii) at least one non-photocrosslinkable ligand and iii) at least one photocrosslinkable ligand, to liquid coating compositions comprising the precursors, and to their use.

Metal oxide precursors, coating compositions containing same, and use thereof

The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InXwhere X=F, Cl, Br, I with a secondary amine of the formula R'NH where R&#x2032;=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.

Process for preparing indium alkoxide compounds, the indium alkoxide compounds preparable by the process and the use thereof

The present invention relates to halogenated indium oxo alkoxides of the generic formula InO(OH)(OR)X(ROH)where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X&#x2550;F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

Indium oxoalkoxides for producing coatings containing indium oxide

The present invention relates to a novel thin film transistor (TFT) comprising a substrate () with a gate electrode layer () deposited and patterned thereon and a gate insulator layer () deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer () arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer () deposited on the carrier injection layer, and (iii) a semiconductor layer (), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.

Low contact resistance thin film transistor

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MO(OR)[O(R'O)H]X[R&#x2033;OH]where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R&#x2032;, R&#x2033;=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

Method for the production of layers containing indium oxide

The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MO(OR)[O(R'O)H]X[R&#x2033;OH], where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R&#x2032;, R&#x2033;=organic group, X&#x2550;F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

Method for the production of metal oxide-containing layers

The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250&#xb0; C., to the layers producible by this process, and to the use thereof.

Method for producing semiconducting indium oxide layers, indium oxide layers produced according to said method and their use

The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L, Land L, in which the solvent Lis selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents Land Lunder SATP conditions is at least 30&#xb0; C., to processes for preparation thereof and to the use thereof.

Compositions containing indium alkoxide, method for the production thereof, and use thereof

The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Method for producing high-performing and electrically stable semi-conductive metal oxide layers, layers produced according to the method and use thereof

The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.

Formulations comprising a mixture of ZnO cubanes and process using them to produce semiconductive ZnO layers

The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR)where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.

Process for producing indium oxide-containing layers

The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium halogen alkoxide of the generic formula InX(OR)where R=alkyl radical and/or alkoxyalkyl radical and X=F, Cl, Br or I and at least one solvent or dispersion medium is, in the sequence of points a) to d), in anhydrous atmosphere, a) applied to the substrate, b) the composition applied to the substrate is irradiated with electromagnetic radiation of wavelength &#x2266;360 nm and c) optionally dried, and then d) converted thermally to an indium oxide-containing layer, to the layers producible by the process and to the use thereof.

Process for producing indium oxide-containing layers, indium oxide-containing layers produced by the process and use thereof

The present invention relates to halogenated indium oxo alkoxides of the generic formula InOX(OR)(R'CH(O)COOR&#x2033;)(HOR)(HNR&#x2032;&#x2033;)where X&#x2550;F, Cl, Br and/or I, R&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2032;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2033;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, R&#x2032;&#x2033;&#x2550;C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- and/or C7-C15-alkoxyaryl, x=0 to 10 and y=0 to 10, to processes for preparation thereof and to use thereof.

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Oberhausen, Germany

Duy Vu Pham