Applied Materials, Inc.

Duy D Nguyen

Kartik Ramaswamy

Sergio Fukuda Shoji

Chetan Mahadeswaraswamy

Yashaswini Pattar

Hamid Noorbakhsh

Walter R Merry

Brad L Mays

Fernando Silveira

Shane C Nevil

Bryan Liao

Tina Tsong

Chunlei Zhang

Shahid Rauf

Douglas A Buchberger, Jr

Ankur Agarwal

Douglas Buchberger

Hamid Tavassoli

David Palagashvili

Katsumasa Kawasaki

Xiaoping Zhou

Phillip Stout

Ritchie Dao

Derek Brodie

Scott Olszewski

Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Feedforward temperature control for plasma processing apparatus

Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Component temperature control by coolant flow control and heater duty cycle control

Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. In further embodiments, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a passive leveling pipe coupling the two reservoirs. In another embodiment, digital heat transfer fluid flow control valves are opened with pulse widths dependent on a heating/cooling duty cycle value and a proportioning cycle having a duration that has been found to provide good temperature control performance.

Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow

Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Synchronized radio frequency pulsing for plasma etching

Methods and systems for adaptively controlling process parameters in semiconductor manufacturing equipment. An embodiment provides for gain scheduling of PID controllers across recipe steps. One embodiment provides a method for controlling a chuck temperature during a semiconductor manufacturing process, the method employing a first set of proportional-integral-derivative (PID) values in a PID controller to control the chuck temperature at a first setpoint in a first step of a process recipe and employing a second set of PID values in the PID controller to control the chuck temperature at a second setpoint, different than the first setpoint, in a second step of the process recipe. The methods and systems provide reduced controller response times where process parameter setpoint between steps of a process recipe span a wide range.

Method of controlling process parameters for semiconductor manufacturing apparatus

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Milpitas, CA, United States of America

Duy D Nguyen