Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Tianjin Sanan Optoelectronics Co., Ltd.

Tiajin Sanan Optoelectornics Co., Ltd.

Duxiang Wang

Chun-Yi Wu

Chaoyu Wu

Ching-Shan Tao

Cheng Meng

Dongyan Zhang

Shu-Fan Yang

Yuehua Jia

Xiaofeng Liu

Jing Wang

Jin Wang

Yi-Jui Huang

Chun-I Wu

Weihuan Li

Yi-an Lu

Junkai Huang

Hongliang Lin

Chao Liu

Liangjun Wang

Yu-Ren Peng

Weiping Xiong

ChingYuan Tsai

Chun Kai Huang

Guanying Huang

Liming Shu

Yian Lu

Shasha Chen

Fulong Li

Wenhao Gao

Xiaofeng LiU

Da-qian Ye

Meijia Yang

Jie Zhang

Jingfeng Bi

Senlin Li

Kunhuang Cai

Chihhung Hsiao

Weihua Du

Huiwen Li

Huan-Shao Kuo

Chih Pang Ma

Jun-Zhao Zhang

Daqian Ye

Wen-Hao Gao

Sha-sha Chen

Chao Jin

Huan-shao Kuo

Zhibin Liu

Shih-Yi Lien

Chuang Yu Hsieh

Shufan Yang

Wen Liu

Zhendong Ning

Huanshao Kuo

Weifan Ke

Chen Kang Hsieh

Ling-Fei Wang

Chia-hung Chang

A light-emitting device includes a first type semiconductor layer, an active layer, a second type semiconductor layer disposed adjacent to the active layer and opposite the first type semiconductor layer, and including a current spreading layer that has a recess, an insulation layer filling the recess and protruding from a surface of the current spreading layer that faces in a direction away from the active layer, and a contact layer disposed on the surface of the current spreading layer which lacks said insulation layer. A sum of a depth of the recess and a thickness of the contact layer is not less than a thickness of the insulation layer. A method for producing the light-emitting device is also disclosed.

Light emitting device and method for producing the same

A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.

Light-emitting component comprising fluorine-containing region with improved current spread and light dispersion

A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a InAlGaAs highly doped p-type semiconductor layer wherein z ranges from 0 to 0.05, a AlGaAs first composition graded layer wherein X2 is greater than 0 and less than X1, a GaInP highly doped n-type semiconductor layer and a AlGaAs second composition graded layer that are sequentially disposed on the first epitaxial structure in such order. A method for making the abovementioned multi-junction LED is also disclosed.

Multi-junction light-emitting diode and method for making the same

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second surface opposing the first surface, a first type semiconductor layer, an active layer, and a second type semiconductor layer; a transparent dielectric layer located on the second surface and in direct contact with the light-emitting epitaxial laminated layer, and having conductive through-holes therein; a transparent conductive layer located on one side surface of the transparent dielectric layer that is distal from the light-emitting epitaxial laminated layer; and a metal reflective layer located on one side surface of the transparent conductive layer that is distal from the transparent dielectric layer; wherein the transparent dielectric layer includes a first layer and a second layer; and wherein the first layer is thicker than the second layer, and a refractivity of the first layer is less than a refractivity of the second layer.

Light emitting diode and fabrication method thereof

A light emitting device includes an epitaxial structure and first and second electrodes on a side of the epitaxial structure. The epitaxial structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode is disposed on the epitaxial structure to be electrically connected with the first-type semiconductor layer. The second electrode is disposed on the epitaxial structure to be electrically connected with the second-type semiconductor layer. The second electrode is in ohmic contact with a second-type window sublayer of the second-type semiconductor layer.

Light emitting device and production method and use thereof

A light-emitting diode device includes an epitaxial structure that contains first-type and second-type semiconductor units and an active layer interposed therebetween, a light transmittable dielectric element that is disposed on the first-type semiconductor unit opposite to the active layer and is formed with a first through hole, an adhesive layer that is disposed on the dielectric element and is formed with a second through hole corresponding in position to the first through hole, and a metal contact element that is disposed on the adhesive layer. The adhesive layer has a thickness of at most one fifth of that of the dielectric element. The metal contact element extends into the first and second through holes, and electrically contacts the first-type semiconductor unit. A method for manufacturing the LED device is also disclosed.

Light-emitting diode device and method for manufacturing the same

A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 &#x3bc;m, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.

A light-emitting diode includes a light-emitting epitaxial layer having a first surface as a light-emitting surface and a second, opposing, surface, including a first type semiconductor layer, an active layer, and a second type semiconductor layer; a metal reflective layer disposed over the second surface; and a protective layer formed seamlessly on a surface of the metal reflective layer and on a side wall of the metal reflective layer.

Disclosed herein is a light emitting diode (LED), which includes a first-type semiconductor unit, an active layer formed on the first-type semiconductor unit, and a second-type semiconductor unit formed on the active layer oppositely of the first-type semiconductor unit. The second-type semiconductor unit includes a hole storage structure that has a polarization field having a direction pointing toward the active layer.

Light-emitting diode

A light-emitting diode includes: a light emitting epitaxial structure including a first-type semiconductor layer, an active layer and a second-type semiconductor layer, and having a first surface as a light emitting surface, and an opposing second surface; a conducting layer formed over the second surface and including a physical plating layer and a chemical plating layer, wherein the physical plating layer is adjacent to the light emitting epitaxial structure and has cracks, and the chemical plating layer fills the cracks in the physical plating layer; and a submount coupled to the light emitting epitaxial laminated layer through the conducting layer.

A multi-layered tunnel junction structure adapted to be disposed between two light emitting structures includes an n-type doped insulation layer, as well as an n-type heavily doped layer, a metal atom layer, a p-type heavily doped layer, and a p-type doped insulation layer which are disposed on the n-type doped insulation layer in such sequential order. A light emitting device having the multi-layered tunnel junction structure and a production method of such light emitting device are also disclosed.

Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

A light emitting device includes a light emitting structure and a distributed Bragg reflector (DBR) structure disposed thereon. The light emitting structure includes an n-type confinement layer, an active layer disposed on the n-type confinement layer, and a p-type confinement layer disposed on the active layer opposite to the n-type confinement layer. The n-type and p-type confinement layers are disposed proximal and distal to the DBR structure, respectively. The DBR structure includes first to NDBR units. The first and NDBR units are disposed proximal and distal to the light emitting structure, respectively. Each of the first to NDBR units has a center reflection wavelength defined by &#x3bb;+(z&#x2212;1)&#x3bb;.

Light emitting device

A light-emitting diode includes a PN junction light-emitting portion over a substrate; wherein the PN junction light-emitting portion includes an alternating-layer structure of alternating a strained light-emitting layer and a barrier layer, wherein the strained light-emitting layer with a component formula of GaInAsP, 0&#x3c;X&#x3c;1 and 0&#x3c;Y&#x2264;0.05, and the barrier layer has a component formula of (AlGa)InP, 0.3&#x2264;a&#x2264;1 and 0&#x3c;b&#x3c;1; when a current of 350 mA flows through the PN junction light-emitting portion in forward direction, the light-emitting diode has an output power at least 202.2 mW.

LED for plant illumination

An epitaxial wafer for plant lighting light-emitting diodes (LED), the epitaxial wafer includes: a growth substrate; a first red-light epitaxial laminated layer; a distributed Bragg reflector (DBR) semiconductor laminated layer; and a second red-light epitaxial laminated layer; wherein: the first red-light epitaxial laminated layer comprises a first N-type ohmic contact layer, a first N-type covering layer, a first light-emitting layer, a first P-type covering layer, and a first P-type ohmic contact layer; and the second red-light epitaxial laminated layer comprises a second N-type ohmic contact layer, a second N-type covering layer, a second light-emitting layer, a second P-type covering layer, and a second P-type ohmic contact layer.

A method of fabricating an LED includes: providing an epitaxial structure having a growth substrate, a first-type semiconductor layer, an active layer and a second-type semiconductor layer; forming an extended electrode and performing thermal treatment to form ohmic contact with the second-type semiconductor layer; providing a temporary substrate bonded with the epitaxial structure, and removing the growth substrate to expose the surface of the first-type semiconductor layer; forming an ohmic contact layer, a mirror layer and a bonding layer over the exposed surface of the first-type semiconductor layer; providing a conductive substrate bonded with the bonding layer, and removing the temporary substrate to expose part of the surface of the second-type semiconductor layer and the extended electrode; forming a roughening surface via etching of the exposed second-type semiconductor layer; and providing a bonding wire electrode forming a closed loop with the extended electrode.

Light emitting diode and method of fabricating the same

Growing community of inventors

Xiamen, China

Duxiang Wang