Applied Materials, Inc.

Other

The Boc Group, Inc.

Dustin Wenpin Ho

Juan Carlos Rocha-Alvarez

Sanjeev Baluja

Thomas E Nowak

Hichem M'Saad

Tom K Cho

Scott A Hendrickson

Andrzei Kaszuba

Alexandros T Demos

Dale Robert Du Bois

Andrzej Kaszuba

Tuan Anh Nguyen

Kelvin Chan

Visweswaren Sivaramakrishnan

Derek R Witty

Nagarajan Rajagopalan

Yao-Hung Yang

Juan Carlos Rocha

Li-Qun Xia

Kang Sub Yim

Yi Zheng

Helen R Armer

Sang H Ahn

Walter H Whitlock

Francimar Campana Schmitt

Lester A D'Cruz

Josephine J Chang

Deming Tang

A filter for filtering a fluid in a substrate processing apparatus comprises first and second stages that are connected to one another. A delivery system provides a vaporized liquid to the filter. The first stage of the filter comprises a basic compound, and the second stage of the filter comprises a desiccant. A second filter comprises a permeation filter with permeable membrane to filter the fluid. Methods of filtering the fluid to reduce formation of undesirable process residues using the filter(s) are also described.

Fluid filtration for substrate processing chamber

A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a centrally positioned longitudinal strip and first and second side reflectors to form a parabolic-type surface. The longitudinal strip and first and second side reflectors have curved reflective surfaces with dichroic coatings and the longitudinal strip comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.

Ultraviolet reflector with coolant gas holes and method

Embodiments of the invention relate generally to an ultraviolet (UV) cure chamber for curing a dielectric material disposed on a substrate and to methods of curing dielectric materials using UV radiation. A substrate processing tool according to one embodiment comprises a body defining a substrate processing region; a substrate support adapted to support a substrate within the substrate processing region; an ultraviolet radiation lamp spaced apart from the substrate support, the lamp configured to transmit ultraviolet radiation to a substrate positioned on the substrate support; and a motor operatively coupled to rotate at least one of the ultraviolet radiation lamp or substrate support at least 180 degrees relative to each other. The substrate processing tool may further comprise one or more reflectors adapted to generate a flood pattern of ultraviolet radiation over the substrate that has complementary high and low intensity areas which combine to generate a substantially uniform irradiance pattern if rotated. Other embodiments are also disclosed.

Apparatus and method for exposing a substrate to a rotating irradiance pattern of UV radiation

A reflector for an ultraviolet lamp can be used in a substrate processing apparatus. The reflector comprises a longitudinal strip extending the length of the ultraviolet lamp. The longitudinal strip has a curved reflective surface and comprises a plurality of through holes to direct a coolant gas toward the ultraviolet lamp. A chamber that uses an ultraviolet lamp module with the reflector, and a method of ultraviolet treatment are also described.

A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.

Method of improving initiation layer for low-k dielectric film by digital liquid flow meter

Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors

An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV bulbs per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV bulbs can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.

High efficiency UV curing system

Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.

Multi-stage curing of low K nano-porous films

Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors

Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

Formation of low K material utilizing process having readily cleaned by-products

A gas mixture comprised of nitric oxide and one or more impurities selected from nitrous oxide, nitrogen dioxide, nitrous acid, sulfur dioxide, carbonyl sulfide, water vapor and carbon dioxide is purified by pressure swing adsorption or temperature swing adsorption using a porous, metal-free polymer adsorbent that does not promote the disproportionation of nitric oxide to nitrogen dioxide and nitrogen or nitrous oxide. The adsorption step is preferably carried out at tempereatures in the range of about &minus;120 to about 0&deg; C.

Process for the purification of nitric oxide

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Fremont, CA, United States of America

Dustin Wenpin Ho