Samsung Electronics Co., Ltd.

Ajou University Industry-Academic Cooperation Foundation

Yonsei University

Duseop Yoon

Joungeun Yoo

Youngjae Kang

Eunsung Lee

SangWoon Lee

Dohyang Kim

Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.

Wiring material for semiconductor device, wiring for semiconductor device including the same, and semiconductor device including the wiring

A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:MAX  Formula 1In Formula 1, M, A, X, and n are as described in the specification.

Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film

A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 &#x3bc;&#x3a9;&#xb7;cm:MAX&#x2003;&#x2003;Formula 1 In Formula 1, M, A, X, and n are as described in the specification.

A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.

Quasicrystalline material and semiconductor device applying the same

Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.

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Seongnam-si, South Korea

Duseop Yoon