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Rfhic Corporation

Duncan Allsopp

Timothy Peter Mollart

Wang Nang Wang

Michael John Edwards

Christopher Rhys Bowen

Quanzhong Jiang

Timothy Mollart

A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness t, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness ton the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch &#x394;T; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due to the thermal expansion mismatch &#x394;T, wherein B, t, t, and &#x394;Tare selected such that the layer of compound semiconductor material contracts on cooling by an amount which off-sets bowing in the bowed substrate thus pulling the bowed composite semiconductor component into a flat configuration, the layer of compound semiconductor material having a tensile stress after cooling of less than 500 MPa.

Substrates for semiconductor devices

Growing community of inventors

Somerset, United Kingdom

Duncan Allsopp