Samsung Electronics Co., Ltd.

Dukyoung Yun

Dong-Young Seo

Chul-Woo Lee

Hyoungsuk Jang

A storage device which generates dump data for debugging at the occurrence of an error includes a memory device including a dump area for storing the dump data, and a storage controller that receives a dump request from a host through a first host interface, stores the dump data in the dump area in response to the dump request, and transmits the stored dump data to the host by using a second host interface after resetting the second host interface.

Storage device, computing system and debugging method thereof

According to example embodiments, a storage device in accordance includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes memory blocks divided into a buffer region and a main region. The memory controller is configured to control the nonvolatile memory device to perform a buffer program operation that includes storing data provided from the outside in the buffer region, to perform a main program operation that includes storing data provided from the outside in the main region, and to perform a closing program operation that includes writing data stored in the buffer region in the main region such the that at least part of the data stored in the buffer region is written to open pages of a memory block including a page programmed last in the main program operation.

Storage device including nonvolatile memory device and method of programming the same

A system comprises a nonvolatile memory device comprising a memory cell array comprising a plurality of memory blocks each comprising a plurality of cell strings, each of cell strings comprises the plurality of memory cells stacked in a direction perpendicular to a substrate, a ground selection transistor disposed between the memory cells and the substrate, and a string selection transistor disposed between the memory cells and a bitline, and configured to read stored data from the memory cells using a plurality of read voltages; and a memory controller configured to read the memory cells using a reference voltage to generate on-cell data, and adjust the read voltages of the nonvolatile memory device based on the generated on-cell data.

Growing community of inventors

Hwaseong-si, South Korea

Dukyoung Yun