Samsung Electronics Co., Ltd.

Dukhyun Choe

Jinseong Heo

Seunggeol Nam

Sanghyun Jo

Yunseong Lee

Taehwan Moon

Hagyoul Bae

Junghwa Kim

HyunJae Lee

Hyangsook Lee

Eunha Lee

Hyunjae Lee

Provided are a ferroelectric material and an electronic device including same, the ferroelectric material including: a first domain including a first polarization layer which is polarized in a first direction and a first spacer layer disposed adjacent to the first polarization layer; a second domain including a second polarization layer which is polarized in a second direction distinct from the first direction and a second spacer layer disposed adjacent to the second polarization layer; and a structural layer, which is disposed at a domain wall between the first domain and the second domain, and belongs to/has atoms arranged according to a Pbcn space group.

Ferroelectric material, and electronic device including the same

A capacitor device and a semiconductor device including the capacitor device are provided. The capacitor device includes first and second electrodes spaced apart from each other, and a dielectric layer provided between the first electrode and the second electrode. The dielectric layer includes a dielectric material in which ferroelectrics and antiferroelectrics are mixed with each other.

Capacitor device and semiconductor device including the same

A semiconductor device includes: a first source/drain region; a second source/drain region; a channel between the first source/drain region and the second source/drain region; an interfacial insulating layer on the channel; a ferroelectric layer on the interfacial insulating layer; and a gate electrode on the ferroelectric layer, wherein, when a numerical value of dielectric constant of the interfacial insulating layer is K and a numerical value of remnant polarization of the ferroelectric layer is Pr, a material of the interfacial insulating layer and a material of the ferroelectric layer are selected so that K/Pr is 1 or more.

Semiconductor device and electronic apparatus including the semiconductor device

A thin film structure includes a substrate; and a material layer having a fluorite structure, the material layer on the substrate and comprising crystals of which <112> crystal orientation is aligned in a normal direction of the substrate. The material layer may have ferroelectricity. The material layer may include the crystals of which the <112> crystal orientation is aligned in the normal direction of the substrate among all crystals of the material layer in a dominant ratio.

Thin film structure and semiconductor device comprising the same

Provided are a thin film structure, a semiconductor device including the thin film structure, and a semiconductor apparatus including the semiconductor device. The thin film structure includes a substrate, and a ferroelectric layer on the substrate. The ferroelectric layer includes a compound having fluorite structure, in which a <001> crystal direction is aligned in a normal direction of a substrate, and having an orthorhombic phase and including fluorine. The ferroelectric layer may have ferroelectricity.

Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device

A layer structure including a dielectric layer, a method of manufacturing the layer structure, and an electronic device including the layer structure are disclosed. The layer structure including a lower layer, a dielectric layer, and an upper layer sequentially stacked. The dielectric layer includes sequentially stacked first, second, and third layers, wherein one of the first layer or the third layer is a ferroelectric, the other one is an anti-ferroelectric, and the second layer is an oxide layer. In one example, the dielectric layer may further include a fourth layer on the third layer.

Layer structure including dielectric layer, methods of manufacturing the layer structure, and electronic device including the layer structure

Provided are a ferroelectric semiconductor device and a method of extracting a defect density of the same. A ferroelectric electronic device includes a first layer, an insulating layer including a ferroelectric layer and a first interface that is adjacent to the first layer, and an upper electrode over the insulating layer, wherein the insulating layer has a bulk defect density of 10cmeVor more and an interface defect density of 10cmeVor more.

Ferroelectric semiconductor device and method of extracting defect density of the same

Provided is a content-addressable memory. The content-addressable memory may include a memory cell connected to a match line, a word line, and a search line, and the memory cell includes a first channel layer and a second channel layer doped with different dopants.

Content-addressable memory and electronic device including the same

Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate, a channel layer at least one of on or in the substrate, an insulation layer on the substrate, a ferroelectric layer on the insulation layer, a fixed charge layer on an interface between the insulation layer and the ferroelectric layer, the fixed charge layer including charges of a first polarity, and a gate on the ferroelectric layer.

Growing community of inventors

Suwon-si, South Korea

Dukhyun Choe