Korea Advanced Institute of Science and Technology

Lg Display Co., Ltd.

Samsung Electronics Co., Ltd.

Cms Technology, Inc.

Nano Cms Co., Ltd.

Duk-Young Jeon

Kyu-Nam Kim

Hyun-Jin Cho

Sun-Joong Park

Shang-hyeun Park

Tae-won Jeong

Yong-Hee Lee

Bong-Je Park

So-Mang Kim

Ji-yon Han

Shi-surk Kim

Keong-Su Lim

Sang-Su Kim

Ho-Seong Jang

Ho-seong Jang

Chang-Hyun Lee

Shi-Surk Kim

The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Quantum-dot light emitting diode, method of fabricating the quantum-dot light emitting diode and quantum-dot light emitting display device

Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

Quantum rod, quantum rod film and quantum rod display device including the same

A phosphor represented by Formula 1:ZnS:Cu,Cl,Mn,Te.&#x2003;&#x2003;Formula 1

Phosphor, white light emitting device including the phosphor and method of preparing the phosphor

The present invention relates to a phosphor and a white LED, more particularly, to a method for fabricating a yellow emitting Ce-activated silicate phosphor with a new composition represented as (SrMN)SiO:Ce, (0&#x3c;x&#x2266;0.3, M includes at least one selected from alkaline earth metals on the periodic table, 0&#x2266;y&#x2266;1, N is at least one selected from alkali metals on the periodic table and 0&#x2266;z&#x2266;0.3) and a preparation method thereof and an LED using the same. The phosphor according to the present invention shows a broad band emission when it is excited by the existing InGaN-based blue LED and GaN-based ultraviolet LED with long wavelength. The LED using the phosphor according to the present invention has a broad emission with a wide spectral range and good color purity and very high light emitting efficiency when is applied to a LED and a backlight source of a liquid crystal display.

[object Object]

The present invention relates to a phosphor having excellent emission brightness by inclusion of Si or Fe in the phosphor having a TbAG:Ce composition, and a white LED. The white photoluminescent device in accordance with the present invention comprises at least one light-emitting diode emitting light with a wavelength of 430 to 470 nm and a phosphor having a composition of TbAG:Ce, wherein the phosphor having a composition of TbAG:Ce is composed of a compositional formula of (TbCe)(AlM)O, wherein x is between 0.01 and 0.4, y is between 0.0 and 0.1, and M is selected from the group consisting of Si and Fe.

White light emitting device

A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected. By using the protective layer, the processes subsequent to the photoelectric face plate deposition process can be freely performed in the atmosphere, to thereby simplify the whole process. As a result, a production cost is lowered, and manufacturing of a device or apparatus using a large-are photocathode is facilitated.

Photocathode having ultra-thin protective layer

Growing community of inventors

Daejeon, South Korea

Duk-Young Jeon