Lg Innotek Co., Ltd.

Lg Electronics Inc.

University-industry Cooperation Group of Kyung Hee University

Hexasolution Co., Ltd.

Duk Kyu Bae

Hyun Kyong Cho

Jun Ho Jang

Sun Jung Kim

Jae Wan Choi

Jeong Soo Lee

Jong Kook Park

Sung Hee Kim

Sun Kyung Kim

Bong Cheol Kang

Ka Youn Kim

Jin Woo Cho

The present inventive concept relates to a thermal radiation body for cooling a heating element, which includes a pattern unit including a pore part provided as an empty space or filled with a gas phase and a cover part covering the pore part and dissipates heat of the heating element through heat radiation.

Thermal radiation body for cooling heating element and method for manufacturing the same

An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.

Light emitting diode having vertical topology and method of making the same

Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a second electrode layer supporting the light emitting semiconductor layer while surrounding the light emitting semiconductor layer, and a first passivation layer between a side of the light emitting semiconductor layer and the second electrode layer.

Light emitting device and method for fabricating the same

Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a first passivation layer on the light emitting semiconductor layer, and a second passivation layer on the first passivation layer and has an elastic modulus of 2.0 to 4.0 GPa.

Light emitting device

A nanometer-scale post structure and a method for forming the same are disclosed. More particularly, a post structure, a light emitting device using the structure, and a method for forming the same, which is capable of forming a nanometer-scale post structure having a repetitive pattern by using an etching process, are disclosed. The method includes forming unit patterns on a substrate by use of a first material, growing a wet-etchable second material on the substrate formed with the unit patterns, and wet etching the substrate having the grown second material.

Post structure, semiconductor device and light emitting device using the structure, and method for forming the same

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Seoul, South Korea

Duk Kyu Bae