Gwangju Institute of Science and Technology

Duk-Jo Kong

Dong-Seon Lee

Chang Mo Kang

Mun-Do Park

Jun-Yeob Lee

Junyoub Lee

A sidewall light emitting ultraviolet light emitting diode and a method of manufacturing thereof are disclosed. A light emitting structure is formed in an active region recessed from a substrate surface, and the light emitting structure is formed by growth in a direction parallel to the surface of the substrate. Also, a reflective metal layer is formed above or below the light emitting structure such that ultraviolet light can be released in a second direction perpendicular to a first direction which is the growth direction of the light emitting structure.

Ultraviolet light emitting diode and method of manufacturing the same

Disclosed herein is a method of separating a GaN substrate by wet etching. The method employs chemical lift-off, and includes forming oxide layers separated from each other and a GaN column in each space between the oxide layers on a substrate, forming an n-GaN layer covering an upper space on the oxide layers and the n-GaN columns, sequentially forming an active layer, a p-GaN layer, and a p-type electrode on the n-GaN layer, and removing the oxide layers and wet etching the n-GaN columns to separate the substrate. The method can achieve improvement in epitaxial growth of GaN and reduction in fabrication costs through a simple process. In addition, the method can increase a luminous area and light extraction efficiency.

Growing community of inventors

Gwangju, South Korea

Duk-Jo Kong