Taiwan Semiconductor Manufacturing Comp. Ltd.

Duen-Huei Hou

Ji-Feng Ying

Wen-Chung Liu

Wei-Shan Hu

Jang Jung Lee

Dong Gui

Che-Liang Li

Chao-Cheng Chen

Chun-Hung Lee

Hsin-Chih Chen

Jhong-Sheng Wang

Kuo-Chin Liu

J H Wang

Tsu Hao Wang

A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.

Fin Field-Effect Transistor and method of forming the same

A semiconductor device includes a magnetic random access memory (MRAM) cell. The MRAM cell includes a first magnetic layer disposed over a substrate, a first non-magnetic material layer made of a non-magnetic material and disposed over the first magnetic layer, a second magnetic layer disposed over the first non-magnetic material layer, and a second non-magnetic material layer disposed over the second magnetic layer. The second magnetic layer includes a plurality of magnetic material pieces separated from each other.

Magnetic random access memory and manufacturing method thereof

Embodiments disclosed herein relate generally to methods for measuring a characteristic of a substrate. In an embodiment, the method includes scanning over the substrate with a scanning probe microscope, the substrate having fins thereon, the scanning obtaining images showing respective fin top regions of the fins, the scanning probe microscope interacting with respective portions of sidewalls of the fins by a scanning probe oscillated during the scanning, selecting images obtained at a predetermined depth below the fin top regions to obtain a line edge profile of the fins, by a processor-based system, analyzing the line edge profile of the fins using power spectral density (PSD) method to obtain spatial frequency data of the line edge profile of the fins, and by the processor-based system, calculating line edge roughness of the fins based on the spatial frequency data.

Line edge roughness analysis using atomic force microscopy

Fin field-effect transistor and method of forming the same

A method of writing to a magnetic random access memory cell includes applying an alternating current signal to the magnetic random access memory cell having a first magnetic orientation, and applying a direct current pulse to the magnetic random access memory cell to change the magnetic orientation of the magnetic random access memory cell from the first magnetic orientation to a second magnetic orientation. The first magnetic orientation and the second magnetic orientation are different.

Assisted write method for magnetic random access memory

Assisted write method for MRAM testing and field applications

Growing community of inventors

Hsinchu, Taiwan

Duen-Huei Hou