Samsung Electronics Co., Ltd.

Seoul National University

Duckhyun Chang

Youngjin Cho

Sun-Young Lim

Chankyung Kim

Uksong Kang

JinHyeok Choi

Sungyong Seo

Donggi Lee

Taesung Jung

Jinhyuk Kim

Bryan Suk Joon Kim

Byungse So

SangLyul Min

A nonvolatile memory device includes a nonvolatile memory, a volatile memory being a cache memory of the nonvolatile memory, and a first controller configured to control the nonvolatile memory. The nonvolatile memory device further includes a second controller configured to receive a device write command and an address, and transmit, to the volatile memory through a first bus, a first read command and the address and a first write command and the address sequentially, and transmit a second write command and the address to the first controller through a second bus, in response to the reception of the device write command and the address.

Nonvolatile memory device and operation method thereof

Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.

Memory device and program method thereof

Growing community of inventors

Hwasung, South Korea

Duckhyun Chang