Samsung Electronics Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Yonsei University

Korea University Industrial Academic Collaboration Foundation

Duck Hwan Kim

In Sang Song

Jea Shik Shin

Chul Kyu Kim

Sang Uk Son

Moon Chul Lee

Ho Soo Park

Yun Kwon Park

Yeong Gyu Lee

Chul Soo Kim

Hyung Rak Kim

Young Il Kim

Jae Chun Lee

Jeashik Shin

Hosoo Park

Moonchul Lee

Dal Ahn

Jing Cui

Jie Ai Yu

Tae Yoon Kim

Jae Chang Lee

Seong Chan Jun

Cui Jing

Jun Chul Kim

Byeong Kwon Ju

Jae-Sung Rieh

In Bok Song

Jae Shik Shin

Soo Hyun Kim

Ho Joon Park

Seong Joong Kim

Dong Su Kim

Kyong Bok Min

Dong Hoon Hwang

Moon Chui Lee

Khudoyberdiyev Khurshidjon

Young Kim, Ii

A resonator package and a method of manufacturing the same are provided. The method of manufacturing a resonator package involves etching a lower electrode with a hardmask, in which only a portion of a thickness of the lower electrode is etched to shape the lower electrode.

Resonator package and method of manufacturing the same

A resonance apparatus that processes an electrical loss using a conductive material and a method of manufacturing the resonance apparatus are provided. The resonance apparatus includes a lower electrode formed at a predetermined distance from a substrate, and a piezoelectric layer formed on the lower electrode. The resonance apparatus further includes an upper electrode formed on the piezoelectric layer, and a conductive layer formed on the upper electrode or the lower electrode.

Resonance apparatus for processing electrical loss using conductive material and method for manufacturing the same

Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.

Bulk acoustic wave resonator

Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

Method for manufacturing resonance apparatus

An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

Acoustic wave resonator and filter including the same

A wafer level package includes a wafer member having inner cavities in which circuit elements are disposed, element wall members disposed on an internal surface of the wafer member and enclosing element sections in which the circuit elements are disposed, and clearance wall members disposed on external surfaces of the element wall members and dividing a space between the element sections into clearance sections.

Wafer level package and method of manufacturing the same

In examples, there is provided a bulk acoustic wave resonator including a substrate; a resonating part including a first electrode, a piezoelectric layer, and a second electrode, laminated on an upper surface of the substrate, a cap bonded to the substrate by a bonding agent; and a sealing layer formed on an externally exposed surface of the bonding agent. This structure provides for a bulk acoustic wave resonator with improved reliability.

Bulk acoustic wave resonator and method for manufacturing the same

An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.

Acoustic resonator and method of manufacturing the same

A bulk acoustic wave resonator and a filter in which partial thicknesses of protection layers or reflection layers thereof are differently formed are provided. The bulk acoustic wave resonator includes a bulk acoustic wave resonating part comprising a piezoelectric layer, and a reflection layer configured to reflect waves of a resonance frequency generated by the piezoelectric layer based on a signal applied to the bulk acoustic wave resonating part. A thickness of a portion of the reflection layer is different from a thickness of a remaining portion thereof.

Bulk acoustic wave resonator and filter

A thin film bulk acoustic resonator and a method of manufacturing the same is disclosed. The thin film bulk acoustic resonator includes an acoustic resonator including a first electrode, a second electrode, and a piezoelectric layer disposed between the first electrode and the second electrode; an air gap disposed below the acoustic resonator and above a substrate to reflect the acoustic wave; and an anchor disposed on each of both surfaces of the air gap and having the same thickness as the air gap.

Thin film bulk acoustic resonator and method for manufacturing same

Growing community of inventors

Goyang-si, South Korea

Duck Hwan Kim