Agilent Technologies, Inc.

Hewlett-packard Company

University of California

Emcore Corporation

Alvesta Corporation

Dubravko I Babic

Scott W Corzine

Michael R T Tan

John E Bowers

Albert T Yuen

Richard P Schneider

Shih-Yuan Wang

Brian Elliot Lemoff

Lewis B Aronson

Michael R Tan

Long Yang

Lakshman Rathnam

Pierre H Mertz

James Joseph Dudley

Kent W Carey

Herbert Kraus

Wayne Bi

Tirmula R Ranganath

An improved electromagnetic interference shield for a module includes springs in which the compression force pushes the springs in a direction that is approximately parallel to the optic axis. The springs allow significantly looser tolerances on the placement of the module on its associated printed circuit board. The shield also includes an opening near its center, the edge of which includes a plurality of teeth. When the shield is placed onto the module, the teeth bend along the negative optic axis direction and prevent the shield from being pulled away from the module. Accidental removal of the shield is thus prevented. The shield splits the enclosure ground from the internal signal ground, decreasing the capacitance between them, in turn decreasing another possible source of electromagnetic radiation. In addition, the shield is more cost efficient to manufacture since it only requires a one step assembly process.

Embedded electromagnetic interference shield

A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.

Flip-chip assembly for optically-pumped lasers

An optical assembly includes an optical subassembly containing a prefabricated long wavelength laser optically coupled to a prefabricated short wavelength laser located in a housing. The optical subassembly may be removably installed in the housing in which the short wavelength laser is contained. The short wavelength laser optically pumps the long wavelength laser resulting in a long wavelength laser output. The optical subassembly allows the independent fabrication, optimization and testing of the short wavelength laser and the long wavelength laser.

System for optically pumping a long wavelength laser using a short wavelength laser

An integrated and modular coupling module for coupling light between optical devices, such as an optical fiber connector and optoelectronic device, is presented. In this invention, beam-shaping elements and alignment elements are integrated on a single alignment plate in such a way that they maintain a precise physical relationship. The relative physical arrangement between the beam-shaping elements and the alignment elements are configured such that once the alignment elements are engaged with the peripheral devices, accurate optical alignment between the peripheral devices and the coupling module is also attained. The optical coupling module of the present invention enables it to withstand temperatures of 220&deg; C. or higher while maintaining its integrity and performance. The principle of the present invention can also be extended to constructing coupling modules for coupling other types of electromagnetic radiation.

Integrated coupling modules for high-bandwidth fiber-optic systems

A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulating and has a refractive index lower than that of the light emitting device and the photodetector. This configuration results in a light emitting device and photodetector structure that minimizes the capture of the spontaneous emission light output from the light emitting device by the photodetector while electrically isolating the light emitting device from the photodetector. The electrical isolation of the light emitting device from the photodetector results in a four terminal device in which the light emitting device and photodetector may be independently biased, and can therefore be operated at a very low bias voltage.

System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer

The present invention provides a vertical cavity surface emitting laser having high gain and high reflectivity in the desired wavelength range and good thermal and electrical conductivity. The laser structure is comprised of a first mirror region, a second mirror region, and an active region positioned between the first and second mirror regions. Unlike, prior VCSELs, the active region is fused to both the first mirror region and the second mirror region. This allows the laser designer to optimize laser performance for the desired wavelength range by allowing the choice of different materials for the first mirror region, the second mirror region, and the active region.

Surface emitting laser using two wafer bonded mirrors

An array of n-wavelength vertical cavity surface emitting lasers (VCSELs) can be grown with precise and repeatable wavelength control. First, a foundation VCSEL structure is grown on a substrate. Next, n-paired layers of AlGaAs and InGaP are grown, where n is the desired number of different wavelengths. Next, one of the n regions is masked and etched. The steps of masking and etching are repeated until all n regions are etched. Finally, the upper VCSEL structure is grown.

Monolithic multiple wavelength VCSEL array

An optically pumped vertical-cavity surface-emitting laser (VCSEL) device and a method of fabricating the device utilize two separate substrates that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light to drive the device to emit output laser light having a long peak wavelength. The optically pumped VCSEL device includes a short-wavelength VCSEL formed on one of the two substrates and a long-wavelength VCSEL formed on the other substrate. The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.

Long-Wavelength VCSEL using buried bragg reflectors

A light emitting device and heterojunction phototransistor combination having a structure where a p-type material terminal of a laser is common with an emitter of a PNP heterojunction phototransistor. This configuration results in a light emitting device and heterojunction phototransistor structure that has a drastically reduced bias voltage requirement and that allows independent biasing of the laser and the heterojunction phototransistor.

System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation

A light emitting device and photodetector combination having a structure where the layer of the photodetector that contacts the light emitting device has a semiconductor conductivity type polarity opposite that of the light emitting device. This configuration results in a light emitting device and photodetector structure that has a very low bias voltage requirement. Additionally, by shunting any current flowing through the junction formed where the light emitting device meets the photodetector, the bias voltage requirement is further reduced.

System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation

Buried layers are formed within a semiconductor. Metallic or insulating buried layers are produced several microns within a semiconductor substrate. The buried layer can confine current to the buried layer itself by using a conductive material to create the buried layer. The buried layer can also confine current to a specified area of the semiconductor, by using an insulating material inside of the buried layer or by leaving a created void within the material. The buried layer is useful in the construction of a semiconductor Vertical Cavity Laser (VCL). A buried isolation layer confines the current to a narrow active region increasing efficiency of the VCL. The buried layer is also useful in fabricating discrete devices, such as diodes, transistors, and photodetectors, as well as fabricating integrated circuits.

Buried layer in a semiconductor formed by bonding

A Vertical Cavity Surface-Emitting Laser (VCSEL) assembly in which the polarization is locked to a specified direction that is the same for all VCSELs. A VCSEL according to the present invention includes a VCSEL having a top mirror region, a bottom mirror region, a light generation region between the top and bottom mirror regions, a conducting substrate and a bottom electrode. The bottom mirror region is sandwiched between the conducting substrate and the light generation region, and the conducting substrate is sandwiched between the bottom electrode and the bottom mirror region. The assembly also includes a mounting substrate having top and bottom surfaces, the VCSEL being mechanically coupled to the mounting substrate. The mounting substrate includes a means for defining a first axis. The assembly includes a means for causing the mounting substrate to flex about the first axis thereby inducing a strain in the light generation region which locks the polarization into a mode determined by the first axis. In one embodiment of the present invention, the first axis is defined by a channel in the mounting substrate. The mounting substrate is caused to flex by the application of an adhesive layer applied between the mounting substrate and a mounting surface. The adhesive layer has a thermal coefficient of expansion different from the mounting substrate. In another embodiment, trenches whose direction defines the first axis are located in the top mirror region of the VCSEL.

Polarization-controlled VCSELs using externally applied uniaxial stress

A VCSEL 101 comprising an optical cavity having an optical loss and a loss-determining element 117 coupled to the optical cavity. The loss-determining element 117 progressively increases the optical loss of the optical cavity with increasing lateral distance from the optical axis 105. The optical cavity includes a first mirror region 111, a second mirror region 107, a plane light-generating region 125 sandwiched between the first mirror region 111 and the second mirror region 107, perpendicular to the optical axis 105, and an element 113 that defines the lateral extent of the optical cavity in the plane of the light-generating region 125. The first mirror region 111 and the second mirror region 107 are both conductive and have opposite conductivity modes.

Growing community of inventors

Sunnyvale, CA, United States of America

Dubravko I Babic