International Business Machines Corporation

Hewlett-packard Development Company, L.P.

Digital Equipment Corporation

Compaq Computer Corporation, Inc.

Duane E Galbi

Russell J Houghton

William R Tonti

Josef S Watts

Jack Allan Mandelman

Matthew James Adiletta

Wayne Frederick Ellis

Wagdi William Abadeer

William Ralph Wheeler

Badih El-Kareh

Robert C Rose

Nathan R Hiltebeitel

Samuel William Ho

King-Wai Chow

John Atkinson Fifield

James Albert Slinkman

Mark William Kellogg

Oliver Kiehl

Richard Michael Parent

Michael A Killian

Hsing-San Lee

William H Guthrie

Adam B Wilson

John A Kowaleski

Michael P Clinton

Chris L Houghton

An apparatus and method for performing two-pass real time video compression is provided. Tactical decisions such as encoding and quantization values are determined in software, whereas functional execution steps are performed in hardware. By appropriately apportioning the tasks between software and hardware, the benefits of each type of processing are exploited, while minimizing both hardware complexity and data transfer requirements. One key concept that allows the compression unit to operate in real time is that the architecture and pipelining both allow for B frames to be executed out of order. By buffering B frames, two-pass motion estimation techniques can be performed to tailor bit usage to the requirements of the frame, and therefore provide a more appealing output image.

Method and apparatus for performing two pass quality video compression through pipelining and buffer management

An apparatus and method a method for performing two-pass real time video compression is provided. Tactical decisions such as encoding and quantization values are determined in software, whereas functional execution steps are performed in hardware. By appropriately apportioning the tasks between software and hardware, the benefits of each type of processing are exploited, while minimizing both hardware complexity and data transfer requirements. One key concept that allows the compression unit to operate in real time is that the architecture and pipelining both allow for B frames to be executed out of order. By buffering B frames, two-pass motion estimation techniques can be performed to tailor bit usage to the requirements of the frame, and thereby provide a more appealing output image.

Method and apparatus for performing two pass quality video compression

A driver circuit for limiting electrical noise on a quiescent signal is provided which includes a Transition High Driver circuit, a Transition Low Driver circuit, a Quiescent High Driver circuit, and a Quiescent Low Driver circuit. The driver circuit comprises means for driving an electrical signal with a presumed noisy Transition Power Supply network while it is transitioning from a low voltage level to a high voltage level or vice versa. The signal is driven by the Transition Power Supply network until the electrical signal reaches its quiescent voltage level. At this time, the signal is no longer driven by the Transition Power Supply network but rather by a presumed clean Quiescent Power Supply network. In this manner, noise from transitioning signals is prevented from coupling onto quiescent signals.

Method and apparatus for performing switched supply drive in CMOS pad

A memory device having an on-chip ECC system includes an array of memory cells, some of which have wider transistors than others so that they have faster access speeds. Data bits are written into ordinary memory cells and the check bits are written into the faster cells in order to make up for the delay associated with the calculation of the check bits.

Fast check bit write for a semiconductor memory

A method of processing CMOS circuits provides up to three types of transistors (standard NFETs, PFETs and high current NFETs) without additional masking steps by the simultaneous implantation of the standard PFET and the high current NFET low doped source and drain implants and a separate implantation of the standard NFET.

CMOS processing with low and high-current FETs

A clocking circuit and clocking method provide a clocking signal that tracks supply voltage VDD such that as supply voltage VDD increases, the signal generation delay also increases. Complementary circuit embodiments and methods are described. In one clocking circuit, a capacitive load stores an amount of charge that varies with supply voltage VDD. A discharge circuit linearly discharges the capacitive load under control of a switch which is responsive to an input signal. A detection circuit is coupled to the capacitive load for detecting linear discharging of the capacitive load to a trigger level V.sub.0 and for providing the clocking signal upon detection of the trigger level. The trigger level is predefined and substantially independent of variation in supply voltage VDD. The clocking techniques presented can be advantageously employed within memory devices such as DRAMs or SRAMs.

Clocking circuit with increasing delay as supply voltage VDD

An off-chip driver with regulated supplies compensates for power supply fluctuations. The circuit reduces di/dt noise by providing complementary voltage regulators to regulate the high and low supplies to the driver stages such that they see a constant operating voltage regardless of changes in supply voltage, V.sub.CC. The circuit uses two push-pull stages which charge and discharge the output load capacitance, C.sub.0. This regulated voltage to the driver stages reduces di/dt noise and provides a constant overdrive voltage, constant gate slew rate, and constant staging delay over a specified external supply voltage range.

Off-chip driver with voltage regulated predrive

A fuse, having reduced blow-current requirements thereby minimizing the power supply voltage and chip area required for the driver transistors, has a geometry which is characterized by an essentially uniform width dimension throughout the primary axis of the fuse link but having at least one approximately right angle bend in the fuse link. The fuse can be blown open with approximately 10% of the input current density required for a straight fuse of equal cross-sectional area. The reason for this is that, due to current crowding, the current density is accentuated at the inside corner of the bend. As the input current to the fuse is increased, a current density is reached at the inside corner which causes the fuse material to melt. A notch forms at the inside corner. The fuse geometry altered by the notching causes even more severe current crowding at the notches, and this in turn makes the melting propagate across the width of the fuse. The predictability of the point of fuse blow out allows even greater circuit densities while minimizing the possibility of accidental damage to adjacent devices.

ZAG fuse for reduced blow-current application

A programmable storage element for redundancy-programing includes a programmable antifuse circuit, which includes a plurality of first resistors and a switching circuit for coupling the first resistors in series in response to a plurality of first control signals and for coupling the first resistors in parallel in response to a plurality of second control signals to permit programing of the first resistors, and a sensing circuit for determining whether or not the first resistors have been programmed. The state of the first resistors is determined by comparing a first voltage drop across the first resistors with a second voltage drop across a second resistor. Each of the first resistors is an unsilicided polysilicon conductor which has an irreversible resistance decrease when a predetermined threshold current is applied for a minimum period of time.

Low voltage programmable storage element

A semiconductor memory chip architecture is described implementing of a multi-bit data control function which enables independent control of at least a plurality of data bits via a single control signal. A logically organized memory chip is organized as a 2.sup.n x 4 chip in which one control (CAS0) signal enables a single data bit and another control (CAS1) signal enables the remaining three data bits. By organizing data control on chips in this manner, it becomes possible to optimize design modules such that a minimum number of control signals are used.

Memory device having asymmetrical CAS to data input/output mapping and

A programmable storage element for redundancy-programming includes a programmable antifuse circuit, which includes a plurality of first resistors and a switching circuit for coupling the first resistors in series in response to a plurality of first control signals and for coupling the first resistors in parallel in response to a plurality of second control signals to permit programming of the first resistors, and a sensing circuit for determining whether or not the first resistors have been programmed. The state of the first resistors is determined by comparing a first voltage drop across the first resistors with a second voltage drop across a second resistor. Each of the first resistors is an unsilicided polysilicon conductor which has an irreversible resistance decrease when a predetermined threshold current is applied for a minimum period of time.

An integrated boost and local word line drive system that enhances the speed of the word line drive without providing excessive voltage stresses to the driver devices. A charge reservoir stores a boost voltage under the control of a charge pump that is regulated by a voltage regulator. One of the local word lines coupled to a selected master word line is enabled by a driver that receives the boost voltage. The switching times and signal slew rates of the driver, as well as the boost voltage, are controlled to prevent excessive gate stresses in the support circuitry.

Boosted drive system for master/local word line memory architecture

A voltage reference circuit that produces an output offset from a supply voltage by approximately two volts, the output being relatively stable in the face of vacillations in the external power supplies. The first leg of the circuit utilizes devices having differing Vt's to produce an internal reference of one volt below Vdd. In a first embodiment of the invention, the second leg has a first device that is diode connected, wherein the gate receives the internal reference and the source is at the high power supply, and a second high Vt diode connected device. The two devices are matched to have the same overdrive current, which is at a voltage that is a function of the difference between the gate-to-source voltage of the first device and the threshold voltage of the first device. Thus, the output is a function of the overdrive to, and the diode drop across, the second high-Vt device.

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Jericho, VT, United States of America

Duane E Galbi