Samsung Electronics Co., Ltd.

Du-yeul Kim

Byung-Chul Kim

Jun-hyung Kim

Won-Il Bae

Yong-Gyu Chu

Sang-Pyo Hong

A semiconductor memory device includes a first row of pads including a first plurality of data input/output (I/O) pads; a second row of pads including a second plurality of data I/O pads; and a first I/O multiplexer associated with the first row of pads and providing first output data only to at least one data I/O pad of the first row of pads, even after a data I/O mode of the semiconductor memory device has changed. The semiconductor memory device also includes a second I/O multiplexer associated with the second row of pads and providing second output data only to at least one data I/O pad of the second row of pads, even after the data I/O mode has changed.

Semiconductor memory device comprising two rows of pads

A semiconductor memory device includes a memory cell array a redundant enable signal generating circuit and redundant decoder. The memory cell array includes memory cell array blocks including column selecting signal lines and lower and upper blocks. The redundant enable signal generating circuit programming defective addresses, during a mode setting operation and generating a redundant enable signal when the defective addresses are applied during an operation. The redundant decoder including decoders selecting a corresponding redundant column selecting signal line in response to the redundant enable signal, a corresponding block address, and a lower and upper block address, wherein each of the of decoders is electrically connected to one of the lower and upper blocks.

Semiconductor memory device

A method of configuring a memory cell array block includes dividing a first unit logic block into sub-array blocks and assigning a portion of the sub-array blocks to a second unit logic block, wherein the memory cell array block corresponds to the portion of the sub-array blocks and the second unit logic block, and the portion of the sub-array blocks and the second unit logic block share a peripheral circuit. The first unit logic block may be divided into the sub-array blocks based on a unit of a word line and/or a unit of a bit line. The peripheral circuit may include a row decoder, a column decoder, a sense amplifier and/or an equalize/precharge circuit. A related addressing method, a memory cell array block and semiconductor memory device are also provided.

Growing community of inventors

Suwon-si, South Korea

Du-yeul Kim