Xiamen San'an Optoelectronics Co., Ltd

Tianjin Sanan Optoelectronics Co., Ltd.

Du-Xiang Wang

Chun-Yi Wu

Jin Wang

Jingfeng Bi

Senlin Li

Chun-I Wu

Li-Ming Shu

Chun-Kai Huang

Xiao-Feng Liu

Dong-Yan Zhang

Chih-Hung Hsiao

Ming-Ying Liu

Liang-Jun Wang

Bing-Xian Chung

Cui-Cui Sheng

Chao-Yu Wu

A micro device includes a securing layer, a plurality of micro device units that are separated from each other and that are spaced apart from the securing layer, and a connecting layer that interconnects the micro device units in at least one group of two or more and that is connected to the securing layer so that the micro device units are connected to the securing layer through the connecting layer. A method of making the micro device is also provided.

Micro-device with strengthened connecting layers

A light emitting diode includes an n-type confinement layer, a quantum well active layer formed on the n-type confinement layer, a p-type confinement layer formed on the quantum well active layer, a gallium phosphide-based quantum dot structure formed in the p-type confinement layer, and a GaP-based current spreading layer formed on the GaP-based quantum dot structure. A method of manufacturing the light emitting diode is also provided.

Light emitting diode and method of manufacturing the same

A LED fabrication method includes: providing a substrate; forming a low-temperature AlGaN (0&#x2266;x&#x2266;1) layer over the growth substrate; setting the growth pressure from high to low and temperature and rotation rate from low to high to realize change from three-dimensional growth to two-dimensional growth of the GaN structure layer before growth of the multiple quantum-well layer, in which, Si is doped at position approximate to the multiple quantum-well layer to form an undoped gradient GaN layer and an N-type gradient GaN layer; growing a multiple quantum-well layer, an AlGaN (0&#x2266;x&#x2266;1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.

Light-emitting diode fabrication method

Growing community of inventors

Tianjin, China

Du-Xiang Wang