Enf Technology Co., Ltd.

Du Won Lee

Myung Ho Lee

Jin Sung Kim

Myung Geun Song

Hyeon Woo Park

Jang Woo Cho

Sang Dae Lee

A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C-Calkyl C-Calkoxy propionate, propylene glycol C-Calkyl ether, and propylene glycol C-Calkyl ether acetate.

Thinner composition

Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

Silicon nitride layer etching composition

Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.

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Yongin-si, South Korea

Du Won Lee