Lg Display Co., Ltd.

Du-Seok Oh

Hee-Jung Yang

Won-Joon Ho

Dong-sun Kim

According to an embodiment, a method of fabricating a thin film transistor comprises forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer, the semiconductor layer corresponding to the gate electrode; forming first and second barrier patterns on the semiconductor layer, the first and second barrier patterns including copper nitride; and forming source and drain electrodes on the first and second barrier patterns, respectively, the source and drain electrodes including pure copper.

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Daejeon, South Korea

Du-Seok Oh