Universiteit Gent

Imec Vzw

Imec

Lucent Technologies Inc.

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Interuniversitair Microelektronica Centrum (imec)

Genexis B.v.

Dries Van Thourhout

Günther Roelkens

Roeland Baets

Jonathan Schrauwen

Andrea Trita

Joris Van Campenhout

Maria Ioanna Pantouvaki

Laurent Grenouillet

Jean-Marc Fedeli

Barry Irwin Miller

Lawrence Warren Stulz

Bernardette Kunert

Roel Baets

Liming Zhang

Danaë Delbeke

Geert Van Steenberge

Geert Morthier

Weiguo Yang

Dirk Taillaert

Gerard Nicolaas Van Den Hoven

Regis Orobtchouk

Philippe Regreny

Pedro Rojo-Romeo

Yannick De Koninck

Stijn Scheerlinck

Pietro Arturo Giovanni Bernasconi

Fabio Pavanello

Yuting Shi

Zhechao Wang

Liu Liu

Stijn Vandewiele

Frederik Van Laere

Shahram Keyvaninia

Nicholas J Sauer

Marianna Pantouvaki

A temperature compensation method for wavelength monitoring using spectrometers on photonic integrated chips and a related temperature-compensated wavelength monitoring device include an optical filter of the chip filters a source signal to provide at least one spectral reference line to a first spectrometer to detect thermal wavelength drifts thereof. At least one spectral line to be monitored is received by the same or another spectrometer of the chip to detect wavelength shifts thereof. The detected thermal drift of the reference line is compared to calibrated thermal drifts for the reference line which is associated with a calibrated thermal drift for the spectral response curve of the spectrometer receiving the spectral line to be monitored. A thermal drift rate for the response curve of the optical filter differs from a thermal drift rate for the response curve of the first spectrometer at least by an amount.

On-chip temperature-insensitive read-out

A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode. The PIC also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. A processing component for receiving and processing said combined signal is also comprised.

Polarization independent processing in integrated photonics

Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

Active-passive waveguide photonic system

A photonic integrated circuit comprises an input interface adapted for receiving an optical input signal and splitting it into two distinct polarization modes and furthermore adapted for rotating the polarization of one of the modes for providing the splitted signals in a common polarization mode,. The PIC also comprises a combiner adapted for combining the first mode signal and the second mode signal into a combined signal and a decohering means adapted for transforming at least one of the first mode signal and the second mode signal such that the first mode signal and the second mode signal are received by the combiner in a mutually incoherent state. A processing component for receiving and processing said combined signal is also comprised.

A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

Method for realizing heterogeneous III-V silicon photonic integrated circuits

The present disclosure generally relates to a method of optically coupling a photonic integrated circuit and an external optical component. In one aspect, a method comprises: providing a photonic integrated circuit comprising at least one integrated optical waveguide, the photonic integrated circuit having a cover layer; providing at least one optical component external to the photonic integrated circuit, the at least one optical component having an optical coupling facet and configured to be optically coupled to the at least one integrated optical waveguide, thereby forming an assembly; determining a position of the optical coupling facet of the at least one optical component in the assembly; determining a position of the at least one integrated optical waveguide; designing an optical interface pattern between the optical coupling facet of the at least one optical component in the assembly and the at least one integrated optical waveguide; and writing the interface pattern in the cover layer of the photonic integrated circuit by means of a femtosecond laser, thereby forming an optical interface for optically coupling the optical coupling facet and the at least one integrated optical waveguide.

Method for optical coupling between a photonic integrated circuit and an external optical element

The present disclosure relates to a method for integrating a sub-micron III-V waveguide laser on a semiconductor photonics platform as well as to a corresponding device/system. The method comprises providing on a semiconductor substrate an electrically insulating layer, etching a trench having a width in the range between 50 nm and 800 nm through the electrically insulating layer, thereby locally exposing the silicon substrate, providing a III-V layer stack in the trench by local epitaxial growth to form a channel waveguide, and providing a light confinement element for confining radiation in the local-epitaxial-grown channel waveguide.

Hybrid waveguide lasers and methods for fabricating hybrid waveguide lasers

A hybrid laser for generating radiation includes an optical passive material and an optical active material. The laser includes a first optical waveguide and optical laser components with reflectors in the optical passive material. The first optical waveguide is adapted for coupling out radiation from the hybrid laser. The laser also includes a second optical waveguide defined in the optical active material. The optical laser components include reflectors defining a cavity and furthermore are adapted for providing laser cavity confinement in the first optical waveguide and the second optical waveguide. The second optical waveguide thereby is positioned at least partly over the first optical waveguide so that an evanescent coupling interface is defined between the second optical waveguide and the first optical waveguide and the evanescent coupling interface is positioned within the laser cavity.

Laser light coupling into SOI CMOS photonic integrated circuit

The present invention relates to an integrated photonic device () operatively coupleable with an optical element () in a first coupling direction. The integrated photonic device () comprises an integrated photonic waveguide () and a grating coupler () that is adapted for diffracting light from the waveguide () into a second coupling direction different from the first coupling direction. The integrated photonics device also comprises a refractive element () disposed adjacent the grating coupler () and adapted to refract the light emerging from the grating coupler () in the second coupling direction into the first coupling direction.

Integrated photonics device

Method of producing a photonic device including at least one light source and at least one photodetector on a structure including a waveguide layer, this method comprising the following steps: a) growing successively on a substrate (), a photodetection structure () and a light source structure (), the photodetection structure and the light source structure being made of a stack of layers, the light source layers being stacked on top of the photodetector layers and both structures sharing one of these layers. b) bonding the structure obtained by step a) to the said waveguide structure (), the light source structure being in contact with the said waveguide structure (), c) removing the substrate () from the structure obtained by step b), d) etching the structure () obtained by step c) to define the at least one photodetector (), e) etching the structure obtained by step d) to define the at least one light source (), f) forming electrodes () on the least one photodetector () and on the least one light source ().

Method of producing a photonic device and corresponding photonic device

An optical device for optically multiplexing or demultiplexing light of different predetermined wavelengths is provided, the optical device comprising at least one first waveguide () and at least one second waveguide () formed on a substrate (), wherein the at least one first waveguide and the at least one second waveguide intersect at an intersection, comprising a diffraction grating structure () formed at the intersection. There exists a first wavelength or wavelength band travelling within the first waveguide () exciting the grating structure and being diffracted an angle corresponding to an outcoupling direction and there exists a second wavelength or wavelength band, different from the first wavelength or wavelength band, travelling within the second waveguide () exciting the grating structure and being diffracted at an angle corresponding to the same outcoupling direction. The two radiation beams comprising radiation of two different wavelengths or wavelength bands are spatially separated into the optical waveguides (and) or combined into single outcoupling direction, e.g. into a single optical element, e.g. a single optical fiber (). An optical device may be used in local access communications such as fiber to the home, office or curb applications.

Method and system for multiplexer waveguide coupling

A method for trimming an effective refractive index of optical waveguiding structures made for example in a high refractive index contrast material system. By compaction of cladding material in a compaction area next to patterns or ridges that are formed in the core material for realizing an optical waveguiding structure, the effective index of refraction of the optical waveguiding structure can be trimmed. Thus, the operating wavelength of an optical component comprising such an optical waveguiding structure can be trimmed. An optical waveguide structure thus obtained is also disclosed.

Method for effective refractive index trimming of optical waveguiding structures and optical waveguiding structures

A slanted grating coupler for coupling a radiation beam between a waveguide lying substantially in a plane on a substrate and an optical element outside that plane is provided, whereby the slanted grating coupler has a good coupling efficiency for medium or low index contrast material systems. Furthermore, a method for manufacturing the slanted grating coupler is provided. The slanted grating coupler comprises a plurality of slanted slots extending through the waveguide core and being arranged successively in the propagation direction of the waveguide. In at least part of the coupling region, the size of the slanted slots in a lateral direction, being a direction within the waveguide plane and perpendicular to the propagation direction of the waveguide, is smaller than the lateral size of the waveguide core. Successive slots are displaced with respect to each other in the lateral direction. Radiation incident from the waveguide on a slanted slot of the slanted segmented coupler is partly reflected upwards at the interface with air. Part of the radiation is transmitted in between or around the slots and propagates further, until it reaches another slot.

Slanted segmented coupler

A high power multi-frequency laser includes a laser cavity defined by reflective elements, a frequency routing device in the cavity comprising a plurality of frequency selective pathways, a first set of optical amplifiers optically coupled to a first end of the frequency routing device, and a second set of optical amplifiers optically coupling a second end of the frequency routing device and a first one of the reflective elements. The high power multi-frequency laser further includes a power combiner. The power combiner is optically coupled to the first set of optical amplifiers and a second one of the reflective elements and combines the outputs of the first set of optical amplifiers such that a common output for the multi-frequency laser is provided. The common output of the present invention provides a single output from the multi-frequency laser having a high output coupling efficiency.

Growing community of inventors

Ghent, Belgium

Dries Van Thourhout