Lam Research Corporation

Imec

Katholieke Universiteit Leuven

Lam Research Ag

Katholieke Universiteit Leuven, Ku Leuven R&d

Dries Dictus

Yezdi N Dordi

Aniruddha Joi

Steven James Madsen

Artur Kolics

Timothy William Weidman

Richard Janek

Christian Thomas Fischer

Dry development or dry removal of metal-containing extreme ultraviolet radiation (EUV) photoresist is performed in atmospheric conditions or performed in process tools without vacuum equipment. Dry removal of the metal-containing EUV photoresist may be performed under atmospheric pressure or over-atmospheric pressure. Dry removal of the metal-containing EUV photoresist may be performed with exposure to an air environment or with non-oxidizing gases. A process chamber or module may be modified or integrated to perform dry removal of the metal-containing EUV photoresist with baking, wafer cleaning, wafer treatment, or other photoresist processing function. In some embodiments, the process chamber for dry removal of the metal-containing EUV photoresist includes a heating assembly for localized heating of a semiconductor substrate and a movable discharge nozzle for localized gas delivery above the semiconductor substrate.

Process tool for dry removal of photoresist

A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.

Zincating and doping of metal liner for liner passivation and adhesion improvement

A method comprises depositing a barrier layer on a dielectric layer to prevent oxidation of a metal layer to be deposited by electroplating due to an oxide present in the dielectric layer and depositing a doped liner layer on the barrier layer to bond with the metal layer to be deposited on the liner layer by the electroplating. The dopant forms a protective passivation layer on a surface of the liner layer and dissolves during the electroplating so that the metal layer deposited on the liner layer by the electroplating bonds with the liner layer. The dopant reacts with the dielectric layer and forms a layer of a compound between the barrier layer and the dielectric layer. The compound layer prevents oxidation of the barrier layer and the liner layer due to the oxide present in the dielectric layer and adheres the barrier layer to the dielectric layer.

Metal liner passivation and adhesion enhancement by zinc doping

A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.

Passivation mixture and systems and methods for selectively passivating substrate materials including germanium or type III-IV materials using the passivation mixture

A liquid mixture for etching a substrate includes a first liquid comprising one of: (i) percarboxylic acid comprising 3 to 70 mass. % of the liquid mixture; or (ii) carboxylic acid comprising 3 to 70 mass. % of the liquid mixture and at least one liquid selected from a group consisting of hydrogen peroxide comprising 3 to 30 mass. % of the liquid mixture and ozone comprising 0.5 to 5 mass. % of the liquid mixture; a water drawing agent comprising 2 to 40 mass. % of the liquid mixture; hydrofluoric acid comprising 0.05 to 3 mass. % of the liquid mixture; and water comprising 0 to 60 mass. % of the liquid mixture. The liquid mixture may be used to etch silicon germanium relative to silicon, silicon dioxide and silicon nitride.

Liquid mixture and method for selectively wet etching silicon germanium

A method of forming a capping layer over copper containing contacts in a dielectric layer with a liner comprising a noble metal liner around the copper containing contacts is provided. An electroless deposition is provided to deposit a deposition comprising copper on the noble metal liner and the copper containing contacts. A capping layer is formed over the deposition comprising copper.

Method for capping copper interconnect lines

The preferred embodiments provide a method for forming at least one metal comprising elongated nanostructure on a substrate. The method comprises exposing a metal halide compound surface to a photon comprising ambient to initiate formation of the at least one metal comprising elongated nanostructure. The preferred embodiments also provide metal comprising elongated nanostructures obtained by the method according to preferred embodiments.

Photon induced formation of metal comprising elongated nanostructures

A method for providing electroless plating is provided. An amorphous carbon barrier layer is formed over the low-k dielectric layer by providing a flow a deposition gas, comprising a hydrocarbon, H, and an oxygen free diluent, forming a plasma from the deposition gas, and stopping the flow of the deposition gas. The amorphous carbon barrier layer is conditioned by providing a flow of a conditioning gas comprising Hand a diluent, forming a plasma from the conditioning gas, which conditions a top surface of the amorphous carbon barrier layer, and stopping the flow of the conditioning gas. The amorphous carbon barrier layer is functionalized by providing a flow of a functionalizing gas comprising NHor Hand N, forming a plasma from the functionalizing gas, and stopping the flow of the functionalizing gas. An electroless process is provided to form an electrode over the barrier layer.

Electroless copper deposition

The present invention provides a method for in-situ cleaning of walls of a reaction chamber, e.g. reactive ion etching chamber, to remove contamination, e.g. copper comprising contamination from the walls. The method comprises converting the contamination, e.g. copper comprising contamination into a halide compound, e.g. copper halide compound and exposing the halide compound, e.g. copper halide compound to a photon comprising ambient, thereby initiating formation of volatile halide products, e.g. volatile copper halide products. The method furthermore comprises removing the volatile halide products, e.g. volatile copper halide products from the reaction chamber to avoid saturation of the volatile halide products, e.g. volatile copper halide products in the reaction chamber in order to avoid re-deposition of the volatile halide products, e.g. volatile copper halide products to the walls of the reaction chamber.

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Kessel-lo, Belgium

Dries Dictus