Iqe Plc

Drew Nelson

Andrew C Clark

Rodney Pelzel

Michael S Lebby

Richard Hammond

David Cheskis

Rich Hammond

Alan Gott

A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.

Semiconductor material having tunable permittivity and tunable thermal conductivity

Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Porous distributed Bragg reflectors for laser applications

Growing community of inventors

Vale of Glamorgan, United Kingdom

Drew Nelson