Samsung Electronics Co., Ltd.

Doyoon Kim

Seyun Kim

Soichiro Mizusaki

Jinhong Kim

Changsoo Lee

Hajin Kim

Haengdeog Koh

Minjong Bae

Hiesang Sohn

Yumin Kim

Ilhwan Kim

Youngjin Cho

Jesada Ungnapatanin

Seokho Yun

Hyunjae Song

Taehun Kim

Jinwoo Lee

Sunghyun Nam

Dongho Ahn

Changyup Park

Myunghun Woo

Moorim Kim

Jooheon Kang

Intaek Han

Areum Ko

Donggeon Gu

Seungyeul Yang

Kunwoo Choi

Minhyoung Lee

Suseong Noh

A semiconductor device includes a lower structure, a stack structure including gate layers and interlayer insulating layers alternately stacked on the lower structure in a first direction, and a channel structure in a channel hole passing through the stack structure. The channel structure includes a variable resistance material layer in the channel hole, a data storage material layer between the variable resistance material layer and a sidewall of the channel hole, and a channel layer between the data storage material layer and the sidewall of the channel hole, the channel layer includes a first element, the variable resistance material layer includes a second element, different from the first element, oxygen, and oxygen vacancies, and the data storage material layer includes the first element, the second element, oxygen, and oxygen vacancies.

Semiconductor devices and data storage systems including the same

Disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. The memory device including a vertical stack structure includes an oxygen scavenger layer on a base substrate, a recording material layer on the oxygen scavenger layer and in direct contact with the oxygen scavenger layer, a channel layer on the recording material layer, a gate insulating layer on the channel layer, and a gate electrode on the gate insulating layer. The oxygen scavenger layer includes an element that forms oxygen vacancies in the recording material layer and does not include oxygen.

Memory device including vertical stack structure, method of fabricating the same, and electronic device including memory device

A variable resistance memory device includes a variable resistance layer and a first conductive element and a second conductive element which are spaced apart from each other on the variable resistance layer. The variable resistance layer may include a first layer and a second layer on the first layer. The first layer includes a ternary or more metal oxide containing two or more metal materials having different valences. The second layer may include silicon oxide. The variable resistance memory device may have a wide range of resistance variation due to the metal oxide in which oxygen vacancies are easily formed. The first conductive element and the second conductive element, in response to an applied voltage, may be configured to form a current path in a direction perpendicular to a direction in which the first layer and the second direction are stacked.

Variable resistance memory device

A heating element includes a plurality of matrix particles and a conductive inorganic filler disposed at interfaces between the plurality of matrix particles to provide a conductive network.

Heating element, manufacturing method thereof, composition for forming heating element, and heating apparatus

A variable resistance memory may include first and second conductive elements spaced apart from each other on a variable resistance layer. The variable resistance layer may include first to third oxide layers sequentially arranged in a direction perpendicular to a direction in which the first and second conductive elements are arranged. A dielectric constant of the second oxide layer may be greater than dielectric constants of the first and third oxide layers.

An electronic device and method are disclosed herein. The electronic device includes a housing, a first, second, third and fourth electrode coupled to the housing, a communication module, and a processor. The processor implements the method, including: detect a first signal using the first electrode and the fourth electrode, detect a second signal using the second electrode and the fourth electrode, detect a third signal using the third electrode and the fourth electrode, transmit the first signal, the second signal, and the third signal to an external electronic device via the communication module, and receive, from the external electronic device, via the communication module, data for generating guidance information to correct an attachment position of the electronic device, wherein the guidance information is generated based on: a first biological signal generated based on the first signal and the second signal, a second biological signal generated based on the second signal and the third signal, and a third biological signal generated based on the third signal and the first signal.

Electronic device for providing guide information

Disclosed are a memory device including a vertical stack structure and a method of manufacturing the memory device. The memory device includes an insulating structure having a shape including a first surface and a protrusion portion protruding in a first direction from the first surface, a recording material layer covering the protrusion portion along a protruding shape of the protrusion portion and extending to the first surface on the insulating structure a channel layer on the recording material layer along a surface of the recording material layer, a gate insulating layer on the channel layer, and a gate electrode formed at a location on the gate insulating layer to face a second surface which is a protruding upper surface of the protrusion portion, wherein a void exists between the gate electrode and the insulating structure, defined by the insulating structure and the recording material layer.

Memory device including vertical stack structure and method of manufacturing the same

A planar heating apparatus includes a substrate, first electrodes on the substrate, second electrodes alternately arranged with the first electrodes, an electrode connector connecting end portions of the first or second electrodes to each other and a power connector connected to the electrode connector and to which a power supply is connected. The power connector extends outside of the substrate.

Planar heating apparatus and heating device including the same

Provided are a structure, a planar heater including the same, a heating device including the planar heater, and a method of preparing the structure. The structure includes a metal substrate, an insulating layer disposed on the metal substrate, an electrode layer disposed on the insulating layer, and an electrically conductive layer disposed on the electrode layer, wherein a difference in a coefficient of thermal expansion (CTE) between the metal substrate and the insulating layer is 4 parts per million per degree Kelvin change in temperature (ppm/K) or less.

Structure, planar heater including the same, heating device including the planar heater, and method of preparing the structure

A composition for forming a heating element; a dried and sintered product thereof; and a method of preparing the composition for forming a heating element, the composition including a matrix particle, a composite filler, and a solvent, wherein the composite filler includes a core and a coating layer disposed on the core, the core includes a nanosheet filler, and the composition has a pH in a range of about 5 to about 9.

Composition for forming a heating element and method of preparing the composition

An electric oven includes a top plate and a bottom plate facing each other, two side plates facing each other, and a rear plate connecting the top plate, the bottom plate and the two side plates where the top plate, the bottom plate, the two side plates and the rear plate define a cavity having a front opening, a door which selectively opens and closes the front opening of the cavity, a casing which surrounds the cavity, a support member interposed between the casing and the cavity, and one or more planar heating elements which extend along one plane, are detachably supported by the support member, and apply radiant heat to the cavity.

Electric oven

A The heating element structure includes: a conductive metal substrate; a heating layer spaced apart from the conductive metal substrate and configured to generate heat in response to an electrical signal; electrodes in contact with the heating layer and configured to provide the electrical signal to the heating layer; and a first insulating layer on the conductive metal substrate, the first insulating layer comprising a first matrix material and a particle, wherein a difference between a coefficient of thermal expansion (CTE) of the first matrix material and a coefficient of thermal expansion of the particle is about 4&#xd7;10per Kelvin or less.

Heating element structure, method of forming the same, and heating device including the heating element structure

A heating element includes a matrix material and a nanomaterial filler, wherein the nanomaterial filler includes at least one of a nano-sheet and a nanorod.

Heating element including nano-material filler

A composite material structure including a matrix material layer; and a plurality of one-dimensional nanostructure distributed in the matrix material layer and having an electrical conductivity which is greater than an electrical conductivity of the matrix material layer, wherein the plurality of one-dimensional nanostructures includes a first one-dimensional nanostructure and a second one-dimensional nanostructure in contact with each other.

Growing community of inventors

Hwaseong-si, South Korea

Doyoon Kim