Cree Gmbh

Wolfspeed, Inc.

Doyle Craig Capell

Anant Kumar Agarwal

Sei-Hyung Ryu

John Williams Palmour

Lin Cheng

Charlotte Jonas

Sarit Dhar

Qingchun Zhang

Mrinal Kanti Das

Joseph John Sumakeris

Michael O'Loughlin

Albert Burk

An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2&#xd7;10cm. Related methods are also disclosed.

Low loss electronic devices having increased doping for reduced resistance and methods of forming the same

A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.

Field effect transistor devices with low source resistance

A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.

A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a &#x3c;0001&#x3e; direction of less than 8&#xb0;.

Stable power devices on low-angle off-cut silicon carbide crystals

Growing community of inventors

Hillsborough, NC, United States of America

Doyle Craig Capell