International Business Machines Corporation

Douglas Willard Stout

Paul Steven Zuchowski

Steven H Voldman

Jeffrey H Sloan

Joseph Andrew Iadanza

Scott Whitney Gould

Corey Kenneth Barrows

James P Pequignot

Edward J Nowak

Kenneth Joseph Goodnow

David E Lackey

Ivan L Wemple

Mark Steven Styduhar

Thomas R Bednar

Sebastian Theodore Ventrone

Douglas Wayne Kemerer

David James Hathaway

John Maxwell Cohn

Stephen Gerard Shuma

Francis H Chan

Oscar Conrad Strohacker

Terry Cain Coughlin, Jr

Tariq Rahman

Kerry Bernstein

Anthony Correale, Jr

Steven Frederick Oakland

Bret Roberts Dale

Thomas B Chadwick, Jr

Jason Edward Rotella

Margaret R Charlebois

Rafael Blanco

Wai Ling Chung-Maloney

Charles H Windisch, Jr

John Stephen Austin

Terence B Hook

Rohit Pradeep Shetty

Albert Manhee Chu

Anthony Richard Bonaccio

Norman Jay Rohrer

Susan K Lichtensteiger

Peter Albert Twombly

Mark William Kuemerle

John S Austin

Peter Edwin Cottrell

Daryl Michael Seitzer

Roger Paul Gregor

Pamela Sue Gillis

William John Livingstone

Darin James Daudelin

Jeannie H Panner

Joseph Maryan Milewski

Ronald A Piro

Erich C Schanzenbach

Allen Prescott Haar

Andrew D Huber

Robert W Bassett

Hongfei Wu

Steven Joseph Urish

Loc Khac Nguyen

Mark E Turner

Jeannie T Panner

Steven P Koch

Alice I Biber

Todd M Fisher

Haruo Ito

Debra K Korejwa

Philip S Homsinger

Scott T Wameling

Disclosed are embodiments of a design structure transistor that operates as a capacitor and an associated method of tuning capacitance within such a capacitor. The embodiments of the capacitor comprise a field effect transistor with front and back gates above and below a semiconductor layer, respectively. The capacitance value exhibited by the capacitor can be selectively varied between two different values by changing the voltage condition in a source/drain region of the transistor, e.g., using a switch or resistor between the source/drain region and a voltage supply. Alternatively, the capacitance value exhibited by the capacitor can be selectively varied between multiple different values by changing voltage conditions in one or more of multiple channel regions that are flanked by multiple source/drain regions within the transistor. The capacitor will exhibit different capacitance values depending upon the conductivity in each of the channel regions.

Tunable capacitor

Structures and methods for implementing alternating power gating in integrated circuits. A semiconductor structure includes a power gated circuit including a group of power gate switches and an alternating enable generator that generates enabling signals. Each respective one of the power gate switches is enabled by a respective one of the enabling signals. The alternating generator generates the enabling signals such that a first enabled power gate switch is alternated amongst the group of power gate switches.

Alternate power gating enablement

A method, system and computer program product for analyzing and modifying a static timing slack of a timing path in a static timing analysis of a design of an integrated circuit (IC) with a transient power supply are disclosed. A static timing slack analysis is performed at a selected endpoint in an IC to obtain a candidate timing path leading to the endpoint with a worst static timing slack. A transient static timing slack is determined for the candidate timing path for each clock cycle of a clock signal under the transient power supply. The determined transient static timing slack is used to adjust the timing of the IC and to modify the static timing slack of the candidate timing path.

Static timing slacks analysis and modification

Disclosed are embodiments of a transistor that operates as a capacitor and an associated method of tuning capacitance within such a capacitor. The embodiments of the capacitor comprise a field effect transistor with front and back gates above and below a semiconductor layer, respectively. The capacitance value exhibited by the capacitor can be selectively varied between two different values by changing the voltage condition in a source/drain region of the transistor, e.g., using a switch or resistor between the source/drain region and a voltage supply. Alternatively, the capacitance value exhibited by the capacitor can be selectively varied between multiple different values by changing voltage conditions in one or more of multiple channel regions that are flanked by multiple source/drain regions within the transistor. The capacitor will exhibit different capacitance values depending upon the conductivity in each of the channel regions.

A design structure. The design structure includes: a first set of FETs having a designed first Vt and a second set of FETs having a designed second Vt, the first Vt different from the second Vt; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit configured to generate a compare signal based on a performance measurement of the first monitor circuit and of the second monitor circuit; a control unit responsive to the compare signal and configured to generate a control signal regulator based on the compare signal; and an adjustable voltage regulator responsive to the control signal and configured to voltage bias wells of FETs of the second set of FETs, the value of the voltage bias applied based on the control signal.

Methods and circuits to reduce threshold voltage tolerance and skew in multi-threshold voltage applications

A circuit and a method for adjusting the performance of an integrated circuit, the method includes: comprising: (a) measuring the performance of a first monitor circuit having at least one field effect transistor (FET) of a first set of FETs, each FET of the first set of FETs having a designed first threshold voltage; (b) measuring the performance of a second monitor circuit having at least one field effect transistor (FET) of a second set of FETs, each FET of the second set of FETs having a designed second threshold voltage, the second threshold voltage different from the first threshold voltage; and (c) applying a bias voltage to wells of the FETs of the second set of FETs based on comparing a measured performance of the first and second monitor circuits to specified performances of the first and second monitor circuits.

Methods to reduce threshold voltage tolerance and skew in multi-threshold voltage applications

Disclosed herein is a system for controlling power supply voltage to an on-chip power distribution network. The system incorporates a programmable on-chip sensing network that can be selectively connected to the power distribution network at multiple locations. When the sensing network is selectively connected to the power distribution network at an optimal sensing point, a local voltage feedback signal from that optimal sensing point is generated and used to adjust the power supply voltage and, thus, to manage voltage distribution across the power distribution network. Additionally, the system incorporates a policy for managing the voltage distribution across the power distribution network, a means for profiling voltage drops across the power distribution network and a means for selecting the optimal sensing point based on the policy and the profile. Another embodiment of the system can further control power supply voltages to multiple power distribution networks on the same chip.

Programmable on-chip sense line

A design structure embodied in a machine readable medium used in a design process includes a voltage divider device, including a double gate field effect transistor (FET) having a first gate and a second gate disposed at opposite sides of a body region; the first and second gates configured to have an input voltage coupled thereacross; and at least one of a source of the FET and a drain of the FET configured to have an output voltage taken therefrom; wherein the output voltage represents a divided voltage with respect to the input voltage.

Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices

The inventions herein are directed to an inventive bus keeper and logic circuit for use with an I/O circuit, for example, for use on the receiver side of the I/O buffer circuit. The inventive circuit connects one data line of an IC function to one line of a tri-state bus (one bit of data per bus line or wire). The bus keeper and logic control circuit is maintained in isolation from I/O functional driver and is responsive to a tri-state signal (TS), normally provided by the IC or SOC, or the I/O circuit during normal I/O receiver side operation. The inventive bus keeper and logic circuit selectively enables any of a tri-state state, a pull-up state, pull-down state and bus keep mode state at the driver output pad in the presence of the tri-state enable signal, and is disabled when the I/O bus drive buffer circuit is in drive mode.

Electronic circuit for maintaining and controlling data bus state

Disclosed are embodiments of a method of designing and producing an integrated circuit. During the pre-release chip design process, the method subdivides the overall process window for an integrated circuit design into smaller successive intervals corresponding to achievable performance. Each performance interval is independently optimized for performance versus power by assigning to each interval a different corresponding supply voltage. Timing for the design is then closed for each interval at each assigned voltage. After chip manufacturing, the method measures the performance of the integrated circuits that are manufactured according to the design. Using these performance measurements, the circuits are sorted into bins corresponding to each performance interval and appropriately labeled (e.g., with the performance goal and previously assigned supply voltage corresponding to the performance interval).

Integrated circuit design closure method for selective voltage binning

A circuit and a method for adjusting the performance of an integrated circuit, the circuit includes: first and second sets of FETs having respective first and second threshold voltages, the first threshold voltage different from the second threshold voltage; a first monitor circuit containing at least one FET of the first set of FETs and a second monitor circuit containing at least one FET of the second set of FETs; a compare circuit adapted to generate a compare signal based on a performance measurement of the first monitor circuit and a performance measurement of the second monitor circuit; and a control unit adapted to generate a control signal to a voltage regulator based on the compare signal, the voltage regulator adapted to supply a bias voltage to wells of FETs of the second set of FETs, the value of the bias voltage based on the control signal.

Circuits to reduce threshold voltage tolerance and skew in multi-threshold voltage applications

A method for altering circuit characteristics to make them independent of processing parameters of devices within an integrated circuit is disclosed. A process parameter is measured by a kerf or on-chip built-in test on a selective set of chip on a wafer, and the results are stored on a storage device within each respective chip. Then, for each of the remaining chips, a two-dimensional interpolation is performed to determine the process parameter value for the respective chip based on the measured value. The interpolated values are recorded along with the coordinates of the chip in an efuse control file. Such information is subsequently stored into an efuse module within the chip. On-chip digital control structures are used to adjust certain operational characteristics of a functional component within the chip based on the information stored in the efuse module.

Method and apparatus for storing circuit calibration information

An electrostatic discharge protection network that uses triple well semiconductor devices either singularly or in a series configuration. The semiconductor devices are preferably in diode junction type configuration.

Electrostatic discharge protection networks for triple well semiconductor devices

A voltage divider device includes a double gate field effect transistor (FET) having a first gate and a second gate disposed at opposite sides of a body region. An input voltage is coupled between the first and second gates, and an output voltage is taken from at least one of a source of the FET and a drain of the FET, wherein the output voltage represents a divided voltage with respect to the input voltage.

Structure and method for implementing oxide leakage based voltage divider network for integrated circuit devices

Growing community of inventors

Milton, VT, United States of America

Douglas Willard Stout