Texas Instruments Corporation

Douglas W Romm

Donald Charles Abbott

Paul R Moehle

Michael E Mitchell

Michael R Head

Larry W Nye

A leadframe for use in the assembly of integrated circuit chips comprising a base metal structure having an adherent layer of nickel covering said base metal; an adherent film of palladium on said nickel layer; and an adherent layer of palladium on said palladium film, selectively covering areas of said leadframe suitable for bonding wire attachment and solder attachment.

Palladium-spot leadframes for high adhesion semiconductor devices and method of fabrication

A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering the base metal; a plated layer of pure tin on the nickel layer, selectively covering areas of the leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said Leadframe intended for bonding wire attachment.

Semiconductor leadframes plated with thick nickel, minimum palladium, and pure tin

Leadframes for high adhesion semiconductor devices and method of fabrication

An electrical apparatus having resistance to atmospheric effects includes at least one electrical device and a packaging structure. The packaging structure substantially encloses the at least one electrical device. The packaging structure includes a corrosion-resisting agent.

Electrical apparatus having resistance to atmospheric effects and method of manufacture therefor

A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering said base metal; a plated layer of pure tin on said nickel layer, selectively covering areas of said leadframe intended for attachment to other parts; and a plated layer of palladium on said nickel layer, selectively covering areas of said leadframe intended for bonding wire attachment.

A leadframe for use with integrated circuit chips comprising a base metal having a plated layer of nickel fully covering the base metal and a plated layer of pure tin, only </&equals;0.5 &mgr;m thick, on the nickel layer, selectively covering areas of the leadframe intended for attachment to other parts. For devices with gull-wing-shaped leads, these pre-plated tin areas cover only the external lead surface intended to face an outside part, and the lead edges. Further, a plated layer of palladium on the nickel layer selectively covers areas of the leadframe intended for bonding wire attachment.

Thin tin preplated semiconductor leadframes

A bump connection structure and a method of attachment to integrated circuits or packages is provided which comprises a prefabricated core structure coated with solderable metal layers to form a composite bump. Said composite bump is aligned to contact pads of the chip or package which have been coated with solder paste, and the assembly heated to form a metallurgical bond. The prefabricated core structures are comprised of metal, plastic or ceramic of the size and dictated by package standards. The connection structure is preferably lead free.

Composite connection structure and method of manufacturing

The invention is directed to a manifold 10 that is used in conjunction with a die attach cure station for providing a 'quick cure' of the die mount adhesive, and for forcing contaminants away from the semiconductor die 33 surface. The manifold has an air put port 21 directly above the semiconductor die. Forced air is directed through the port. At each side of the forced port are vacuum ports 20,22 through which a vacuum is applied to draw air and heated die attach contaminants from the die surface. Air is also drawn from below and around the die mounting area to provide a stream of air that is drawn into the vacuum ports.

Growing community of inventors

Sherman, TX, United States of America

Douglas W Romm